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Littelfuse, Inc. 600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options IXFB70N100X

Description
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Features: Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages Advantages: Higher efficiency High power density Easy to mount Space savings Applications: Industrial switched-mode and resonant-mode power supplies Electric vehicle battery chargers AC and DC motor drives DC-DC converters Renewable-energy inverters Power Factor Correction (PFC) circuits Robotics and servo control
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Suppliers

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Product
Description
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600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFB70N100X - Littelfuse, Inc.
Chicago, IL, United States
600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options
IXFB70N100X
600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options IXFB70N100X
Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Features: Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages Advantages: Higher efficiency High power density Easy to mount Space savings Applications: Industrial switched-mode and resonant-mode power supplies Electric vehicle battery chargers AC and DC motor drives DC-DC converters Renewable-energy inverters Power Factor Correction (PFC) circuits Robotics and servo control

Ultra-Junction X-Class Power MOSFETs with fast body diodes are rugged devices that display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these Ultra-Junction MOSFETs help reduce switching losses and electromagnetic interference (EMI). Features: Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages Advantages: Higher efficiency High power density Easy to mount Space savings Applications: Industrial switched-mode and resonant-mode power supplies Electric vehicle battery chargers AC and DC motor drives DC-DC converters Renewable-energy inverters Power Factor Correction (PFC) circuits Robotics and servo control

Supplier's Site
Single FETs, MOSFETs - IXFB70N100X-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFB70N100X-ND
Single FETs, MOSFETs IXFB70N100X-ND
N-Channel 1000V 70A (Tc) 1785W (Tc) Through Hole PLUS264™

N-Channel 1000V 70A (Tc) 1785W (Tc) Through Hole PLUS264™

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number IXFB70N100X IXFB70N100X-ND
Product Name 600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options Single FETs, MOSFETs
Polarity N-Channel N-Channel
V(BR)DSS 1000 volts
IDSS 70000 milliamps
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