- Trained on our vast library of engineering resources.

Littelfuse, Inc. 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFA4N60P3

Description
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Features: Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages Advantages: Higher efficiency High power density Easy to mount Space savings Applications: Industrial switched-mode and resonantmode power supplies Electric vehicle battery chargers AC and DC motor drives DC-DC converters Renewable-energy inverters Power Factor Correction (PFC) circuits Robotics and servo control
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFA4N60P3 - Littelfuse, Inc.
Chicago, IL, United States
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
IXFA4N60P3
300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) IXFA4N60P3
The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Features: Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages Advantages: Higher efficiency High power density Easy to mount Space savings Applications: Industrial switched-mode and resonantmode power supplies Electric vehicle battery chargers AC and DC motor drives DC-DC converters Renewable-energy inverters Power Factor Correction (PFC) circuits Robotics and servo control

The PolarP3™ HiPerFET™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative to weaker super junction technologies. These PolarP3™ HiPerFETs demonstrate up to a 12 percent reduction in on-state resistance (Rdson), 14 percent reduction in gate charge (Qg) and as high as 20 percent increase in maximum power dissipation (Pd). Lower thermal resistances are also achieved due to reduced chip thicknesses, increasing total power density of the device. Features: Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages Advantages: Higher efficiency High power density Easy to mount Space savings Applications: Industrial switched-mode and resonantmode power supplies Electric vehicle battery chargers AC and DC motor drives DC-DC converters Renewable-energy inverters Power Factor Correction (PFC) circuits Robotics and servo control

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXFA4N60P3
Product Name 300V - 600V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs)
Polarity N-Channel
V(BR)DSS 600 volts
IDSS 4000 milliamps
Unlock Full Specs
to access all available technical data

Similar Products

100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH24N50Q - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 500 volts
IDSS 24000 milliamps
View Details
600V - 1000V Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFA4N85X - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 850 volts
IDSS 3500 milliamps
View Details
3 suppliers
N-Channel Depletion-Mode MOSFETs Series - CPC3730 - Littelfuse, Inc.
Specs
Polarity N-Channel
MOSFET Operating Mode Depletion
Package Type SOT89; SOT-89
View Details
100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH52N30Q - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 300 volts
IDSS 52000 milliamps
View Details
2 suppliers