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Littelfuse, Inc. 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXFA34N65X3

Description
This 650V X3-Class Ultra Junction MOSFETs feature a fast body diode. They are available with 34A nominal current rating in TO-263 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg leading to an improvement in the Figure of Merit FOM: RDS(on) x Qg as compared to its predecessor X2-Class. These benefits enable designers to achieve higher efficiency and increased power density. This series of power MOSFETs feature fast body diodes which offer low reverse recovery charge (QRM) and short reverse recovery time (trr)Features: On-state resistance: RDS(ON) = 100mΩ Reverse recovery time: trr = 150ns Thermal resistance: RthJC = 0.28K/W Avalanche rating: EAS = 750mJ Gate charge: Qg = 29nC Benefits: Low static losses Well-suited for high frequency applications Simplified thermal design High ruggedness against overvoltage Low gate drive power demand
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Description
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150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFA34N65X3 - Littelfuse, Inc.
Chicago, IL, United States
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options
IXFA34N65X3
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXFA34N65X3
This 650V X3-Class Ultra Junction MOSFETs feature a fast body diode. They are available with 34A nominal current rating in TO-263 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg leading to an improvement in the Figure of Merit FOM: RDS(on) x Qg as compared to its predecessor X2-Class. These benefits enable designers to achieve higher efficiency and increased power density. This series of power MOSFETs feature fast body diodes which offer low reverse recovery charge (QRM) and short reverse recovery time (trr)Features: On-state resistance: RDS(ON) = 100mΩ Reverse recovery time: trr = 150ns Thermal resistance: RthJC = 0.28K/W Avalanche rating: EAS = 750mJ Gate charge: Qg = 29nC Benefits: Low static losses Well-suited for high frequency applications Simplified thermal design High ruggedness against overvoltage Low gate drive power demand

This 650V X3-Class Ultra Junction MOSFETs feature a fast body diode. They are available with 34A nominal current rating in TO-263 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg leading to an improvement in the Figure of Merit FOM: RDS(on) x Qg as compared to its predecessor X2-Class. These benefits enable designers to achieve higher efficiency and increased power density. This series of power MOSFETs feature fast body diodes which offer low reverse recovery charge (QRM) and short reverse recovery time (trr)Features: On-state resistance: RDS(ON) = 100mΩ Reverse recovery time: trr = 150ns Thermal resistance: RthJC = 0.28K/W Avalanche rating: EAS = 750mJ Gate charge: Qg = 29nC Benefits: Low static losses Well-suited for high frequency applications Simplified thermal design High ruggedness against overvoltage Low gate drive power demand

Supplier's Site Datasheet
Single FETs, MOSFETs - 5656-IXFA34N65X3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
5656-IXFA34N65X3-ND
Single FETs, MOSFETs 5656-IXFA34N65X3-ND
N-Channel 650V 34A (Tc) 446W (Tc) Surface Mount TO-263 (IXFA)

N-Channel 650V 34A (Tc) 446W (Tc) Surface Mount TO-263 (IXFA)

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number IXFA34N65X3 5656-IXFA34N65X3-ND
Product Name 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options Single FETs, MOSFETs
Polarity N-Channel N-Channel
V(BR)DSS 650 volts
IDSS 34000 milliamps
rDS(on) 0.1000 ohms
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