- Trained on our vast library of engineering resources.

Littelfuse, Inc. 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXFA130N15X3

Description
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Features: Lowest on-resistance RDS(ON)and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages Applications: Battery chargers for light electric vehicles Synchronous rectification in switchingpower supplies Motor control DC-DC converters Uninterruptible power supplies Electric forklifts Class-D audio amplifiers Telecom systems
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFA130N15X3 - Littelfuse, Inc.
Chicago, IL, United States
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options
IXFA130N15X3
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options IXFA130N15X3
Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Features: Lowest on-resistance RDS(ON)and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages Applications: Battery chargers for light electric vehicles Synchronous rectification in switchingpower supplies Motor control DC-DC converters Uninterruptible power supplies Electric forklifts Class-D audio amplifiers Telecom systems

Developed using a charge compensation principle and proprietary process technology, these Ultra Junction MOSFETs provide the best-in-class Figure of Merit (on-resistance times gate charge), which translates into lowest conduction and switching losses. They exhibit the lowest on-state resistances in the industry. With low reverse recovery charge and time, the body diodes are capable of removing all the leftover energies during high-speed switching to avoid device failure and achieve high efficiency. Moreover, these new devices are avalanche capable and exhibit a superior dv/dt performance as well. They are robust against device failure caused by voltage spikes and accidental turn-on of parasitic bipolar transistors inherent in the MOSFET structure. As such these rugged devices require fewer snubbers and can be used in both hard and soft switching power converters. Features: Lowest on-resistance RDS(ON)and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability International standard packages Applications: Battery chargers for light electric vehicles Synchronous rectification in switchingpower supplies Motor control DC-DC converters Uninterruptible power supplies Electric forklifts Class-D audio amplifiers Telecom systems

Supplier's Site Datasheet
Single FETs, MOSFETs - IXFA130N15X3-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXFA130N15X3-ND
Single FETs, MOSFETs IXFA130N15X3-ND
N-Channel 150V 130A (Tc) 390W (Tc) Surface Mount TO-263 (IXFA)

N-Channel 150V 130A (Tc) 390W (Tc) Surface Mount TO-263 (IXFA)

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number IXFA130N15X3 IXFA130N15X3-ND
Product Name 150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options Single FETs, MOSFETs
Polarity N-Channel N-Channel
V(BR)DSS 150 volts
IDSS 130000 milliamps
Unlock Full Specs
to access all available technical data

Similar Products

100V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH26N60Q - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 600 volts
IDSS 28000 milliamps
View Details
600V - 700V Power MOSFETs with HiPerFET™ Options - IXFN150N65X2 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 650 volts
IDSS 145000 milliamps
View Details
4 suppliers
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFK26N100P - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 1000 volts
IDSS 26000 milliamps
View Details
2 suppliers
60V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH20N60 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 600 volts
IDSS 20000 milliamps
View Details