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Littelfuse, Inc. 2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs IXBX50N360HV

Description
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Features: "Free" intrinsic body diode High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity 4000V electrical isolation Advantages: Low gate drive requirements Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices) Easy to mount Applications: Switched-mode and resonant-mode power supplies Uninterruptible Power Supplies (UPS) Laser and X-ray generators Capacitor discharge circuits High voltage pulser circuits High voltage test equipment AC switches
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Product
Description
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2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs - IXBX50N360HV - Littelfuse, Inc.
Chicago, IL, United States
2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs
IXBX50N360HV
2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs IXBX50N360HV
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Features: "Free" intrinsic body diode High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity 4000V electrical isolation Advantages: Low gate drive requirements Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices) Easy to mount Applications: Switched-mode and resonant-mode power supplies Uninterruptible Power Supplies (UPS) Laser and X-ray generators Capacitor discharge circuits High voltage pulser circuits High voltage test equipment AC switches

BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Features: "Free" intrinsic body diode High power density High frequency operation Low conduction losses MOS gate turn on for drive simplicity 4000V electrical isolation Advantages: Low gate drive requirements Space savings (eliminates multiple series-parallel lower voltage, lower current rated devices) Easy to mount Applications: Switched-mode and resonant-mode power supplies Uninterruptible Power Supplies (UPS) Laser and X-ray generators Capacitor discharge circuits High voltage pulser circuits High voltage test equipment AC switches

Supplier's Site Datasheet
Igbt, 3.6Kv, 125A, 150Deg C, 660W; Continuous Collector Current Littelfuse - 03AH0395 - Newark, An Avnet Company
Chicago, IL, United States
Igbt, 3.6Kv, 125A, 150Deg C, 660W; Continuous Collector Current Littelfuse
03AH0395
Igbt, 3.6Kv, 125A, 150Deg C, 660W; Continuous Collector Current Littelfuse 03AH0395
IGBT, 3.6KV, 125A, 150DEG C, 660W; Continuous Collector Current:125A; Collector Emitter Saturation Voltage:2.4V; Power Dissipation:660W; Collector Emitter Voltage Max:3.6kV; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes

IGBT, 3.6KV, 125A, 150DEG C, 660W; Continuous Collector Current:125A; Collector Emitter Saturation Voltage:2.4V; Power Dissipation:660W; Collector Emitter Voltage Max:3.6kV; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXBX50N360HV 03AH0395
Product Name 2500V - 3600V Reverse Conducting (BiMOSFET™) IGBTs Igbt, 3.6Kv, 125A, 150Deg C, 660W; Continuous Collector Current Littelfuse
VCES 3600 volts
VCE(on) 2.9 volts
IC(max) 125 amps
tf 1750 ns
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