- Trained on our vast library of engineering resources.

Littelfuse, Inc. 1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs IXBT24N170

Description
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Features: High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages Benefits: Eliminates multiple series-parallel lower voltage, lower current rateddevices Simpler system design Improved reliability Reduced component count Reduced system cost Applications: Radar transmitter power supplies Radar pulse modulators Capacitor discharge circuits High voltage power supplies AC switches HV circuit breakers Pulser circuits High voltage test equipment Laser & X-ray generators
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs - IXBT24N170 - Littelfuse, Inc.
Chicago, IL, United States
1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs
IXBT24N170
1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs IXBT24N170
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Features: High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages Benefits: Eliminates multiple series-parallel lower voltage, lower current rateddevices Simpler system design Improved reliability Reduced component count Reduced system cost Applications: Radar transmitter power supplies Radar pulse modulators Capacitor discharge circuits High voltage power supplies AC switches HV circuit breakers Pulser circuits High voltage test equipment Laser & X-ray generators

BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Features: High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages Benefits: Eliminates multiple series-parallel lower voltage, lower current rateddevices Simpler system design Improved reliability Reduced component count Reduced system cost Applications: Radar transmitter power supplies Radar pulse modulators Capacitor discharge circuits High voltage power supplies AC switches HV circuit breakers Pulser circuits High voltage test equipment Laser & X-ray generators

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Insulated Gate Bipolar Transistors (IGBT)
Product Number IXBT24N170
Product Name 1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs
VCES 1700 volts
Unlock Full Specs
to access all available technical data

Similar Products

100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH12N90P - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 900 volts
IDSS 12000 milliamps
View Details
3 suppliers
300V - 1400V [15 - 40 kHz] PT (Punch Through) IGBTs - IXGT20N120B - Littelfuse, Inc.
Specs
VCES 1200 volts
VCE(on) 3.4 volts
IC(max) 40 amps
View Details
Trench Series - 650V XPT™ (eXtreme-light Punch Through) IGBTs - IXXH30N65B4D1 - Littelfuse, Inc.
Specs
VCES 650 volts
VCE(on) 2 volts
IC(max) 70 amps
View Details
100V - 1200V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFH150N15P - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 150 volts
IDSS 150000 milliamps
View Details
2 suppliers