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Littelfuse, Inc. 1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs IXBH16N170A

Description
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Features: High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages Benefits: Eliminates multiple series-parallel lower voltage, lower current rateddevices Simpler system design Improved reliability Reduced component count Reduced system cost Applications: Radar transmitter power supplies Radar pulse modulators Capacitor discharge circuits High voltage power supplies AC switches HV circuit breakers Pulser circuits High voltage test equipment Laser & X-ray generators
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Suppliers

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Product
Description
Supplier Links
1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs - IXBH16N170A - Littelfuse, Inc.
Chicago, IL, United States
1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs
IXBH16N170A
1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs IXBH16N170A
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Features: High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages Benefits: Eliminates multiple series-parallel lower voltage, lower current rateddevices Simpler system design Improved reliability Reduced component count Reduced system cost Applications: Radar transmitter power supplies Radar pulse modulators Capacitor discharge circuits High voltage power supplies AC switches HV circuit breakers Pulser circuits High voltage test equipment Laser & X-ray generators

BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Features: High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages Benefits: Eliminates multiple series-parallel lower voltage, lower current rateddevices Simpler system design Improved reliability Reduced component count Reduced system cost Applications: Radar transmitter power supplies Radar pulse modulators Capacitor discharge circuits High voltage power supplies AC switches HV circuit breakers Pulser circuits High voltage test equipment Laser & X-ray generators

Supplier's Site Datasheet
Transistor, 1.7Kv, 16A, To-247Ad Rohs Compliant Littelfuse - 29AK0373 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, 1.7Kv, 16A, To-247Ad Rohs Compliant Littelfuse
29AK0373
Transistor, 1.7Kv, 16A, To-247Ad Rohs Compliant Littelfuse 29AK0373
TRANSISTOR, 1.7KV, 16A, TO-247AD ROHS COMPLIANT: YES

TRANSISTOR, 1.7KV, 16A, TO-247AD ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Transistors
Product Number IXBH16N170A 29AK0373
Product Name 1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs Transistor, 1.7Kv, 16A, To-247Ad Rohs Compliant Littelfuse
VCES 1700 volts
VCE(on) 6 volts
IC(max) 16 amps
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