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Littelfuse, Inc. 1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs IXBH10N170

Description
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Features: High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages Benefits: Eliminates multiple series-parallel lower voltage, lower current rateddevices Simpler system design Improved reliability Reduced component count Reduced system cost Applications: Radar transmitter power supplies Radar pulse modulators Capacitor discharge circuits High voltage power supplies AC switches HV circuit breakers Pulser circuits High voltage test equipment Laser & X-ray generators
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Product
Description
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1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs - IXBH10N170 - Littelfuse, Inc.
Chicago, IL, United States
1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs
IXBH10N170
1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs IXBH10N170
BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Features: High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages Benefits: Eliminates multiple series-parallel lower voltage, lower current rateddevices Simpler system design Improved reliability Reduced component count Reduced system cost Applications: Radar transmitter power supplies Radar pulse modulators Capacitor discharge circuits High voltage power supplies AC switches HV circuit breakers Pulser circuits High voltage test equipment Laser & X-ray generators

BiMOSFETs are devices, which have combined strengths of MOSFETs and IGBTs. Non-epitaxial construction and new fabrication processes were used in making BiMOSFETs a great success.These high voltage devices are ideal for parallel operation due to the positive voltage temperature coefficient of both of its saturation voltage, and the forward voltage drop of its intrinsic diode. Furthermore, this “free” intrinsic body diode serves as a protection diode, providing an alternative path for the inductive load current during device turn-off, preventing high Ldi/dt voltage transients from inflicting damage to the device. Features: High blocking voltage High power density High current handling capability Low conduction losses MOS gate turn on for drive simplicity International standard and proprietary ISOPLUSTM packages Benefits: Eliminates multiple series-parallel lower voltage, lower current rateddevices Simpler system design Improved reliability Reduced component count Reduced system cost Applications: Radar transmitter power supplies Radar pulse modulators Capacitor discharge circuits High voltage power supplies AC switches HV circuit breakers Pulser circuits High voltage test equipment Laser & X-ray generators

Supplier's Site Datasheet
Transistor, Igbt, 1.7Kv, 20A, To-247Ad; Continuous Collector Current Littelfuse - 03AH0357 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Igbt, 1.7Kv, 20A, To-247Ad; Continuous Collector Current Littelfuse
03AH0357
Transistor, Igbt, 1.7Kv, 20A, To-247Ad; Continuous Collector Current Littelfuse 03AH0357
TRANSISTOR, IGBT, 1.7KV, 20A, TO-247AD; Continuous Collector Current:20A; Collector Emitter Saturation Voltage:3.4V; Power Dissipation:140W; Collector Emitter Voltage Max:1.7kV; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes

TRANSISTOR, IGBT, 1.7KV, 20A, TO-247AD; Continuous Collector Current:20A; Collector Emitter Saturation Voltage:3.4V; Power Dissipation:140W; Collector Emitter Voltage Max:1.7kV; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc. Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXBH10N170 03AH0357
Product Name 1600V - 1700V Reverse Conducting (BiMOSFET™) IGBTs Transistor, Igbt, 1.7Kv, 20A, To-247Ad; Continuous Collector Current Littelfuse
VCES 1700 volts
VCE(on) 3.8 volts
IC(max) 20 amps
tf 1000 ns
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