Littelfuse, Inc. IXA45IF1200HB

The XPTâ„¢ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat). Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage. Short circuit capability for 10usec. Positive on-state voltage temperature coefficient. Optional co-packed Sonic-FRDâ„¢ or HiPerFREDâ„¢ diodes. International standard and proprietary high voltage packages
Maximum Continuous Collector Current = 78 A
Maximum Collector Emitter Voltage = 1200 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 325 W
Package Type = TO-247
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Transistor Configuration = Single
Length = 16.26mm

The XPTâ„¢ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat). Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage. Short circuit capability for 10usec. Positive on-state voltage temperature coefficient. Optional co-packed Sonic-FRDâ„¢ or HiPerFREDâ„¢ diodes. International standard and proprietary high voltage packages
Maximum Continuous Collector Current = 78 A
Maximum Collector Emitter Voltage = 1200 V
Maximum Gate Emitter Voltage = ±20V
Maximum Power Dissipation = 325 W
Package Type = TO-247
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Transistor Configuration = Single
Length = 16.26mm
Delivery on production packaging - Tube. This product is non-returnable.