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Littelfuse, Inc. Boost Configuration XPT IGBT IXA20RG1200DHGLB

Description
The build in boost configuration offers a compact solution either in boost (PFC) or brake applications and in combination with buck series a solution for switched reluctance motor drives.
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Boost Configuration XPT IGBT - IXA20RG1200DHGLB - Littelfuse, Inc.
Chicago, IL, United States
Boost Configuration XPT IGBT
IXA20RG1200DHGLB
Boost Configuration XPT IGBT IXA20RG1200DHGLB
The build in boost configuration offers a compact solution either in boost (PFC) or brake applications and in combination with buck series a solution for switched reluctance motor drives.

The build in boost configuration offers a compact solution either in boost (PFC) or brake applications and in combination with buck series a solution for switched reluctance motor drives.

Supplier's Site Datasheet
600V - 2500V Surface Mount Power Device (SMPD) Packages - IXA20RG1200DHGLB - Littelfuse, Inc.
Chicago, IL, United States
600V - 2500V Surface Mount Power Device (SMPD) Packages
IXA20RG1200DHGLB
600V - 2500V Surface Mount Power Device (SMPD) Packages IXA20RG1200DHGLB
Our Surface Mount Power Device (SMPD) packaging technology is an expansion of the ISOPLUS™ package portfolio to include modules that can be assembled in standard surface mount (SMD) soldering processes and is pick-and-place ready to be assembled on a customer’s existing SMD assembly lines. Our SMPD range provides a large array of standard options in terms of topology or silicon varieties. Its simplicity and optimized manufacturing process enables fast time to market for customers that require differing die and circuit combinations effectively fast tracking product development. Numerous discrete devices can be successfully combined in one high reliability package that can then be easily assembled on current SMD assembly lines. Features: Ultra-low and compact package profile Surface mountable via standard reflow process Low package weight Up to 4500V ceramic isolation (DCB) Low package inductance Excellent thermal performance High power cycling capability Applications: Battery chargers Switching and resonant power supplies DC choppers DC-DC converters Temperature and Lighting controls Motor drives E-bikes and electric and hybrid vehicles Solar inverters Induction heaters

Our Surface Mount Power Device (SMPD) packaging technology is an expansion of the ISOPLUS™ package portfolio to include modules that can be assembled in standard surface mount (SMD) soldering processes and is pick-and-place ready to be assembled on a customer’s existing SMD assembly lines. Our SMPD range provides a large array of standard options in terms of topology or silicon varieties. Its simplicity and optimized manufacturing process enables fast time to market for customers that require differing die and circuit combinations effectively fast tracking product development. Numerous discrete devices can be successfully combined in one high reliability package that can then be easily assembled on current SMD assembly lines. Features: Ultra-low and compact package profile Surface mountable via standard reflow process Low package weight Up to 4500V ceramic isolation (DCB) Low package inductance Excellent thermal performance High power cycling capability Applications: Battery chargers Switching and resonant power supplies DC choppers DC-DC converters Temperature and Lighting controls Motor drives E-bikes and electric and hybrid vehicles Solar inverters Induction heaters

Supplier's Site Datasheet
 - 8752529P - RS Components, Ltd.
Corby, Northants, United Kingdom
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages. High power density and low VCE(sat). Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage. Short circuit capability for 10usec. Positive on-state voltage temperature coefficient. Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes. International standard and proprietary high voltage packages Maximum Continuous Collector Current = 32 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±30V Maximum Power Dissipation = 125 W Package Type = SMPD Mounting Type = Surface Mount Channel Type = N Pin Count = 9 Transistor Configuration = Single Length = 25mm Delivery on production packaging - Tube. This product is non-returnable.

The XPTâ„¢ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat). Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage. Short circuit capability for 10usec. Positive on-state voltage temperature coefficient. Optional co-packed Sonic-FRDâ„¢ or HiPerFREDâ„¢ diodes. International standard and proprietary high voltage packages
Maximum Continuous Collector Current = 32 A
Maximum Collector Emitter Voltage = 1200 V
Maximum Gate Emitter Voltage = ±30V
Maximum Power Dissipation = 125 W
Package Type = SMPD
Mounting Type = Surface Mount
Channel Type = N
Pin Count = 9
Transistor Configuration = Single
Length = 25mm
Delivery on production packaging - Tube. This product is non-returnable.

Supplier's Site
 - 8752529 - RS Components, Ltd.
Corby, Northants, United Kingdom
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages. High power density and low VCE(sat). Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage. Short circuit capability for 10usec. Positive on-state voltage temperature coefficient. Optional co-packed Sonic-FRD™ or HiPerFRED™ diodes. International standard and proprietary high voltage packages Maximum Continuous Collector Current = 32 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±30V Maximum Power Dissipation = 125 W Package Type = SMPD Mounting Type = Surface Mount Channel Type = N Pin Count = 9 Transistor Configuration = Single Length = 25mm

The XPTâ„¢ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.
High power density and low VCE(sat). Square Reverse Bias Safe Operating Areas (RBSOA) up to rated breakdown voltage. Short circuit capability for 10usec. Positive on-state voltage temperature coefficient. Optional co-packed Sonic-FRDâ„¢ or HiPerFREDâ„¢ diodes. International standard and proprietary high voltage packages
Maximum Continuous Collector Current = 32 A
Maximum Collector Emitter Voltage = 1200 V
Maximum Gate Emitter Voltage = ±30V
Maximum Power Dissipation = 125 W
Package Type = SMPD
Mounting Type = Surface Mount
Channel Type = N
Pin Count = 9
Transistor Configuration = Single
Length = 25mm

Supplier's Site

Technical Specifications

  Littelfuse, Inc. Littelfuse, Inc. RS Components, Ltd.
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number IXA20RG1200DHGLB IXA20RG1200DHGLB 8752529P
Product Name Boost Configuration XPT IGBT 600V - 2500V Surface Mount Power Device (SMPD) Packages
VCES 1200 volts
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