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Littelfuse, Inc. 600V N-Channel Super Junction Power MOSFET Solutions in Buck/Boost/Other Configurations FDM47-06KC5

Description
These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation. Features: Silicon chip on Direct-Copper-Bond substrate Fast CoolMOS™(1) power MOSFET 4th generation Enhanced total power density HiPerDyn™ FRED Applications: Switch mode power supplies Uninterruptible power supplies Power factor correction (PFC) Advantages: Easy assembly Space savings High power density High reliability (1) CoolMOS™ is a trademark of Infineon Technologies AG.
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600V N-Channel Super Junction Power MOSFET Solutions in Buck/Boost/Other Configurations - FDM47-06KC5 - Littelfuse, Inc.
Chicago, IL, United States
600V N-Channel Super Junction Power MOSFET Solutions in Buck/Boost/Other Configurations
FDM47-06KC5
600V N-Channel Super Junction Power MOSFET Solutions in Buck/Boost/Other Configurations FDM47-06KC5
These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation. Features: Silicon chip on Direct-Copper-Bond substrate Fast CoolMOS™(1) power MOSFET 4th generation Enhanced total power density HiPerDyn™ FRED Applications: Switch mode power supplies Uninterruptible power supplies Power factor correction (PFC) Advantages: Easy assembly Space savings High power density High reliability (1) CoolMOS™ is a trademark of Infineon Technologies AG.

These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation. Features: Silicon chip on Direct-Copper-Bond substrate Fast CoolMOS™(1) power MOSFET 4th generation Enhanced total power density HiPerDyn™ FRED Applications: Switch mode power supplies Uninterruptible power supplies Power factor correction (PFC) Advantages: Easy assembly Space savings High power density High reliability (1) CoolMOS™ is a trademark of Infineon Technologies AG.

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Technical Specifications

  Littelfuse, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDM47-06KC5
Product Name 600V N-Channel Super Junction Power MOSFET Solutions in Buck/Boost/Other Configurations
Polarity N-Channel
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