- Trained on our vast library of engineering resources.

Littelfuse, Inc. 600V N-Channel Super Junction Power MOSFET Solutions in Buck/Boost/Other Configurations FDM15-06KC5

Description
These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation. Features: Silicon chip on Direct-Copper-Bond substrate Fast CoolMOS™(1) power MOSFET 4th generation Enhanced total power density HiPerDyn™ FRED Applications: Switch mode power supplies Uninterruptible power supplies Power factor correction (PFC) Advantages: Easy assembly Space savings High power density High reliability (1) CoolMOS™ is a trademark of Infineon Technologies AG.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
600V N-Channel Super Junction Power MOSFET Solutions in Buck/Boost/Other Configurations - FDM15-06KC5 - Littelfuse, Inc.
Chicago, IL, United States
600V N-Channel Super Junction Power MOSFET Solutions in Buck/Boost/Other Configurations
FDM15-06KC5
600V N-Channel Super Junction Power MOSFET Solutions in Buck/Boost/Other Configurations FDM15-06KC5
These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation. Features: Silicon chip on Direct-Copper-Bond substrate Fast CoolMOS™(1) power MOSFET 4th generation Enhanced total power density HiPerDyn™ FRED Applications: Switch mode power supplies Uninterruptible power supplies Power factor correction (PFC) Advantages: Easy assembly Space savings High power density High reliability (1) CoolMOS™ is a trademark of Infineon Technologies AG.

These Power MOSFETs based on Super Junction technology feature the lowest RDS(on) in 600V-800V class MOSFETs. Internal DCB isolation simplifies assembly and reduces thermal resistance from junction to heat sink. These devices are Avalanche rated, thereby guaranteeing rugged operation. Features: Silicon chip on Direct-Copper-Bond substrate Fast CoolMOS™(1) power MOSFET 4th generation Enhanced total power density HiPerDyn™ FRED Applications: Switch mode power supplies Uninterruptible power supplies Power factor correction (PFC) Advantages: Easy assembly Space savings High power density High reliability (1) CoolMOS™ is a trademark of Infineon Technologies AG.

Supplier's Site Datasheet

Technical Specifications

  Littelfuse, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number FDM15-06KC5
Product Name 600V N-Channel Super Junction Power MOSFET Solutions in Buck/Boost/Other Configurations
Polarity N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFA36N20X3 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 200 volts
IDSS 36000 milliamps
View Details
2 suppliers
150V - 650V N-Channel Ultra Junction Power MOSFETs with HiPerFET™ Options - IXFH72N30X3 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 300 volts
IDSS 72000 milliamps
View Details
2 suppliers
500V - 1000V N-Channel Power MOSFETs with Fast Intrinsic Diodes (HiPerFETs) - IXFL80N50Q2 - Littelfuse, Inc.
Specs
Polarity N-Channel
V(BR)DSS 500 volts
IDSS 55000 milliamps
View Details