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Littelfuse, Inc. N-Channel Depletion-Mode MOSFETs Series CPC3701

Description
Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a robust device for high power applications with high input impedance. These highly reliable FET devices have been used extensively in our solid state relays for industrial and telecommunications applications. Features: Device Normally On High Breakdown Voltage Low On-Resistance Low VGS (off) Voltage Low On-Resistance at Cold Temperatures High Input Impedance Low Input and Output Leakage Small Package Size: SOT-23, SOT-89 & SOT-223 Applications: Normally On Switches Ignition Modules Power Supplies Telecommunications Support for LITELINK Devices
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N-Channel Depletion-Mode MOSFETs Series - CPC3701 - Littelfuse, Inc.
Chicago, IL, United States
N-Channel Depletion-Mode MOSFETs Series
CPC3701
N-Channel Depletion-Mode MOSFETs Series CPC3701
Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a robust device for high power applications with high input impedance. These highly reliable FET devices have been used extensively in our solid state relays for industrial and telecommunications applications. Features: Device Normally On High Breakdown Voltage Low On-Resistance Low VGS (off) Voltage Low On-Resistance at Cold Temperatures High Input Impedance Low Input and Output Leakage Small Package Size: SOT-23, SOT-89 & SOT-223 Applications: Normally On Switches Ignition Modules Power Supplies Telecommunications Support for LITELINK Devices

Our N-channel depletion mode field effect transistors (FET) utilize a proprietary third generation vertical DMOS process. The third generation process realizes world-class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a robust device for high power applications with high input impedance. These highly reliable FET devices have been used extensively in our solid state relays for industrial and telecommunications applications. Features: Device Normally On High Breakdown Voltage Low On-Resistance Low VGS (off) Voltage Low On-Resistance at Cold Temperatures High Input Impedance Low Input and Output Leakage Small Package Size: SOT-23, SOT-89 & SOT-223 Applications: Normally On Switches Ignition Modules Power Supplies Telecommunications Support for LITELINK Devices

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Technical Specifications

  Littelfuse, Inc.
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number CPC3701
Product Name N-Channel Depletion-Mode MOSFETs Series
Polarity N-Channel
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