Linde North America, Inc. Deuterated Ammonia

Semiconductor Grade: ≥99.998% Isotopic Enrichement: ≥99 atom% Deuterated Ammonia is used in Gigabyte DRAM production as a source of deuterium in silicon nitride and silicon oxynitride passivation films. The heavier mass of the deuterium is desired to enhance the lifetime of specific transistors when the diffusion of the deuterium portion replaces lost hydrogen. Deuterated Ammonia is a toxic, corrosive, flammable gas with a TLV of 25 ppm.