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Integra Technologies, Inc. GaN S-Band Radar Transistor IGN3135L12

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GaN S-Band Radar Transistor - IGN3135L12 - Integra Technologies, Inc.
El Segundo, CA, USA
GaN S-Band Radar Transistor
IGN3135L12
GaN S-Band Radar Transistor IGN3135L12
■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 12W @ 3ms/30%/46V ■ 3.1-3.5GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and Bias Sequencing Required ■ Specified For Use Under Class AB Operation ■ Metal Based Package Sealed With Ceramic-Epoxy Lid ■ Gold Metallization System: Chip - Wire Bond - Package ■ Package Size: W=0.800” (20.32mm), L=0.230” (5.84mm) ■ 100% High Power RF Tested in Broadband RF Test Fixture

■ GaN on SiC HEMT Technology
■ POUT-PK ≥ 12W @ 3ms/30%/46V
■ 3.1-3.5GHz Instantaneous Operating Frequency Range
■ Internal Impedance Pre-matched Device
■ Depletion Mode Device
■ Negative Gate Voltage and Bias Sequencing Required
■ Specified For Use Under Class AB Operation
■ Metal Based Package Sealed With Ceramic-Epoxy Lid
■ Gold Metallization System: Chip - Wire Bond - Package
■ Package Size: W=0.800” (20.32mm), L=0.230” (5.84mm)
■ 100% High Power RF Tested in Broadband RF Test Fixture

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Technical Specifications

  Integra Technologies, Inc.
Product Category RF MOSFET Transistors
Product Number IGN3135L12
Product Name GaN S-Band Radar Transistor
Transistor Technology / Material GaN
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