Infineon Technologies AG Memory IS29GL512S-11TFV01

Description
IC FLASH 512MBIT PARALLEL 56TSOP
Datasheet
Description
IC FLASH 512MBIT PARALLEL 56TSOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 512MBIT PARALLEL 56TSOP

IC FLASH 512MBIT PARALLEL 56TSOP

Supplier's Site Datasheet
Memory - IS29GL512S-11TFV01 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 512Mbit Parallel 110 ns 56-TSOP

FLASH - NOR Memory IC 512Mbit Parallel 110 ns 56-TSOP

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number IS29GL512S-11TFV01 IS29GL512S-11TFV01
Product Name Memory Memory
Memory Category Flash; Flash Flash; FLASH
Access Time 110 ns 110 ns
Density 512000 kbits 512000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - MYXX28HC256 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 70 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1882785 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details
 - MC28F008-10/B - Rochester Electronics
Rochester Electronics
Specs
Memory Category Flash
Package Type DIP; CDIP
View Details
4 suppliers