Infineon Technologies AG Memory IS29GL512S-11DHV020

Description
FLASH - NOR Memory IC 512Mbit Parallel 110 ns 64-FBGA (9x9)
  • Memory - IS29GL512S-11DHV020 - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - IS29GL512S-11DHV020 - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
FLASH - NOR Memory IC 512Mbit Parallel 110 ns 64-FBGA (9x9)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS29GL512S-11DHV020 - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
IS29GL512S-11DHV020
Memory IS29GL512S-11DHV020
FLASH - NOR Memory IC 512Mbit Parallel 110 ns 64-FBGA (9x9)

FLASH - NOR Memory IC 512Mbit Parallel 110 ns 64-FBGA (9x9)

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Memory - IS29GL512S-11DHV020 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
IS29GL512S-11DHV020
Memory IS29GL512S-11DHV020
IC FLASH 512MBIT PARALLEL 64FBGA

IC FLASH 512MBIT PARALLEL 64FBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number IS29GL512S-11DHV020 IS29GL512S-11DHV020
Product Name Memory Memory
Memory Category Flash; FLASH Flash; Flash
Access Time 110 ns 110 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
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