Infineon Technologies AG Memory IS29GL512S-11DHV020

Description
IC FLASH 512MBIT PARALLEL 64FBGA
Datasheet
Description
IC FLASH 512MBIT PARALLEL 64FBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 512MBIT PARALLEL 64FBGA

IC FLASH 512MBIT PARALLEL 64FBGA

Supplier's Site Datasheet
Memory - IS29GL512S-11DHV020 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 512Mbit Parallel 110 ns 64-FBGA (9x9)

FLASH - NOR Memory IC 512Mbit Parallel 110 ns 64-FBGA (9x9)

Buy Now

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number IS29GL512S-11DHV020 IS29GL512S-11DHV020
Product Name Memory Memory
Memory Category Flash; Flash Flash; FLASH
Access Time 110 ns 110 ns
Density 512000 kbits 512000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 8 611 200 879 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
SDRAM - 2420777P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 0.4000 ns
Number of Words 64000 k
View Details
Memory - 5962-8854102FA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category PROM; PROM
Access Time 60 ns
Density 2 kbits
View Details
Integrated Circuits (ICs) - Memory - Memory - NMC27C256BN150 - Acme Chip Technology Co., Limited
Specs
Memory Category EPROM; Non-Volatile
Density 256 kbits
Supply Voltage 28-DIP (0.600, 15.24mm)
View Details
2 suppliers