Infineon Technologies AG Memory IS29GL512S-11DHV020

Description
FLASH - NOR Memory IC 512Mbit Parallel 110 ns 64-FBGA (9x9)
Datasheet
Description
FLASH - NOR Memory IC 512Mbit Parallel 110 ns 64-FBGA (9x9)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS29GL512S-11DHV020 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 512Mbit Parallel 110 ns 64-FBGA (9x9)

FLASH - NOR Memory IC 512Mbit Parallel 110 ns 64-FBGA (9x9)

Buy Now
IC FLASH 512MBIT PARALLEL 64FBGA

IC FLASH 512MBIT PARALLEL 64FBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number IS29GL512S-11DHV020 IS29GL512S-11DHV020
Product Name Memory Memory
Memory Category Flash; FLASH Flash; Flash
Access Time 110 ns 110 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

5V Memory IC and Storage Component - 774-MT5C1008F45L/883C - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category SRAM Chip
Operating Temperature -40 C (-40 F)
Density 1000 kbits
View Details
2 suppliers
Memory - IS29GL01GS-11DHV02 - Lingto Electronic Limited
Infineon Technologies AG
Specs
Memory Category Flash; Flash
Access Time 110 ns
Density 1000000 kbits
View Details
2 suppliers
Logic - FIFOs Memory - 67C4013-10N - Lingto Electronic Limited
Specs
Data Rate 10 MHz
Operating Current 35 mA
View Details