Infineon Technologies AG Memory IS29GL256S-10DHV02-TR

Description
FLASH - NOR Memory IC 256Mbit Parallel 100 ns 64-FBGA (9x9)
  • Memory - IS29GL256S-10DHV02-TR - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - IS29GL256S-10DHV02-TR - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
FLASH - NOR Memory IC 256Mbit Parallel 100 ns 64-FBGA (9x9)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS29GL256S-10DHV02-TR - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
IS29GL256S-10DHV02-TR
Memory IS29GL256S-10DHV02-TR
FLASH - NOR Memory IC 256Mbit Parallel 100 ns 64-FBGA (9x9)

FLASH - NOR Memory IC 256Mbit Parallel 100 ns 64-FBGA (9x9)

Buy Now Datasheet
Memory - IS29GL256S-10DHV02-TR - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
IS29GL256S-10DHV02-TR
Memory IS29GL256S-10DHV02-TR
IC FLASH 256MBIT PARALLEL 64FBGA

IC FLASH 256MBIT PARALLEL 64FBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number IS29GL256S-10DHV02-TR IS29GL256S-10DHV02-TR
Product Name Memory Memory
Memory Category Flash; FLASH Flash; Flash
Access Time 100 ns 100 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
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