Infineon Technologies AG Memory IS26KL512S-DABLA300

Description
FLASH - NOR Memory IC 512Mb (64M x 8) Parallel 100MHz 96ns 24-FBGA (6x8)
Request a Quote Datasheet
Description
FLASH - NOR Memory IC 512Mb (64M x 8) Parallel 100MHz 96ns 24-FBGA (6x8)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS26KL512S-DABLA300-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NOR Memory IC 512Mb (64M x 8) Parallel 100MHz 96ns 24-FBGA (6x8)

FLASH - NOR Memory IC 512Mb (64M x 8) Parallel 100MHz 96ns 24-FBGA (6x8)

Buy Now Datasheet
Memory - IS26KL512S-DABLA300 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 512Mbit Parallel 100 MHz 96 ns 24-FBGA (6x8)

FLASH - NOR Memory IC 512Mbit Parallel 100 MHz 96 ns 24-FBGA (6x8)

Buy Now
IC FLASH 512MBIT PARALLEL 24FBGA

IC FLASH 512MBIT PARALLEL 24FBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS26KL512S-DABLA300-ND IS26KL512S-DABLA300 IS26KL512S-DABLA300
Product Name Memory Memory Memory
Memory Category Flash Flash; FLASH Flash; Flash
Operating Temperature -40 to 125 C (-40 to 257 F) -40 to 125 C (-40 to 257 F)
Density 512000 kbits 512000 kbits 512000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 04188CBLBB-25 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 1.8 ns
Density 8000 kbits
View Details
Memory - 05523-770/0001 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Flash Memory - 1712234P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 64000 kbits
Package Type SOIC; SOIC
View Details
Memory - AS8ER128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 150 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details