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Infineon Technologies AG N-Channel Power MOSFET IPB024N10N5

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N-Channel Power MOSFET - IPB024N10N5 - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IPB024N10N5
N-Channel Power MOSFET IPB024N10N5
OptiMOS™ 5 100V power MOSFET in D2PAK 7pin package with 22% lower RDS(on) for telecom and server power supply applications OptiMOS™ 5 100V power MOSFET IPB024N10N5 from Infineon is especially designed for synchronous rectification in telecom blocks including Or-ing, hotswap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency. Applications Automotive DIN rail power supplies Trusted semiconductor solutions for light electric vehicles (LEV) Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44% RDS(on) reduction of up to 43% from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Light electric vehicles Adapter Designers who used this product also designed with 2ED2110S06M | Gate Driver ICs 2EDL8033G4B | Gate Driver ICs 6ED2742S01Q | Gate Driver ICs IRS4427S | Gate Driver ICs 1EDI20N12AF | Gate Driver ICs IRS2186S | Gate Driver ICs 1EDB8275F | Gate Driver ICs 1EDI60N12AF | Gate Driver ICs IRS10752L | Gate Driver ICs IRS21271S | Gate Driver ICs 1ED44173N01B | Gate Driver ICs 1EDN7512B | Gate Driver ICs 2ED2110S06M | Gate Driver ICs 2EDL8033G4B | Gate Driver ICs 6ED2742S01Q | Gate Driver ICs IRS4427S | Gate Driver ICs 1EDI20N12AF | Gate Driver ICs IRS2186S | Gate Driver ICs 1EDB8275F | Gate Driver ICs 1EDI60N12AF | Gate Driver ICs 1 2 3

OptiMOS™ 5 100V power MOSFET in D2PAK 7pin package with 22% lower RDS(on) for telecom and server power supply applications

OptiMOS™ 5 100V power MOSFET IPB024N10N5 from Infineon is especially designed for synchronous rectification in telecom blocks including Or-ing, hotswap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.


Applications

  • Automotive
  • DIN rail power supplies
  • Trusted semiconductor solutions for light electric vehicles (LEV)

Summary of Features

  • Optimized for synchronous rectification
  • Ideal for high switching frequency
  • Output capacitance reduction of up to 44%
  • RDS(on) reduction of up to 43% from previous generation

Benefits

  • Highest system efficiency
  • Reduced switching and conduction losses
  • Less paralleling required
  • Increased power density
  • Low voltage overshoot

Potential Applications

  • Telecom
  • Server
  • Solar
  • Low voltage drives
  • Light electric vehicles
  • Adapter

Designers who used this product also designed with


  • 2ED2110S06M |
    Gate Driver ICs
  • 2EDL8033G4B |
    Gate Driver ICs
  • 6ED2742S01Q |
    Gate Driver ICs
  • IRS4427S |
    Gate Driver ICs
  • 1EDI20N12AF |
    Gate Driver ICs
  • IRS2186S |
    Gate Driver ICs
  • 1EDB8275F |
    Gate Driver ICs
  • 1EDI60N12AF |
    Gate Driver ICs
  • IRS10752L |
    Gate Driver ICs
  • IRS21271S |
    Gate Driver ICs
  • 1ED44173N01B |
    Gate Driver ICs
  • 1EDN7512B |
    Gate Driver ICs
  • 2ED2110S06M |
    Gate Driver ICs
  • 2EDL8033G4B |
    Gate Driver ICs
  • 6ED2742S01Q |
    Gate Driver ICs
  • IRS4427S |
    Gate Driver ICs
  • 1EDI20N12AF |
    Gate Driver ICs
  • IRS2186S |
    Gate Driver ICs
  • 1EDB8275F |
    Gate Driver ICs
  • 1EDI60N12AF |
    Gate Driver ICs

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPB024N10N5
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0024 ohms
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