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Infineon Technologies AG N-Channel Power MOSFET IPB017N06N3-G

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N-Channel Power MOSFET - IPB017N06N3-G - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
IPB017N06N3-G
N-Channel Power MOSFET IPB017N06N3-G
OptiMOS™ 60 V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. Summary of Features Excellent gate charge x RDS(on) product (FOM) Very low on-resistance RDS(on) Ideal for fast switching applications RoHS compliant - halogen free MSL1 rated Benefits Highest system efficiency Less paralleling required Increased power density System cost reduction Very low voltage overshoot Potential Applications Synchronous rectification Solar micro inverter Isolated DC-DC converters Motor control for 12-48 V systems Or-ing switches Designers who used this product also designed with IRS21271S | Gate Driver ICs 1ED44173N01B | Gate Driver ICs IRS4427S | Gate Driver ICs BTS3028SDL | Classic HITFET™ 24V | Automotive Low-Side Switch 1EDI60N12AF | Gate Driver ICs 6ED2742S01Q | Gate Driver ICs IRS10752L | Gate Driver ICs IRS21271S | Gate Driver ICs 1ED44173N01B | Gate Driver ICs IRS4427S | Gate Driver ICs BTS3028SDL | Classic HITFET™ 24V | Automotive Low-Side Switch 1EDI60N12AF | Gate Driver ICs 6ED2742S01Q | Gate Driver ICs IRS10752L | Gate Driver ICs IRS21271S | Gate Driver ICs 1 2

OptiMOS™ 60 V is a perfect choice for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger.

In addition these devices can be used for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.


Summary of Features

  • Excellent gate charge x RDS(on) product (FOM)
  • Very low on-resistance RDS(on)
  • Ideal for fast switching applications
  • RoHS compliant - halogen free
  • MSL1 rated

Benefits

  • Highest system efficiency
  • Less paralleling required
  • Increased power density
  • System cost reduction
  • Very low voltage overshoot

Potential Applications

  • Synchronous rectification
  • Solar micro inverter
  • Isolated DC-DC converters
  • Motor control for 12-48 V systems
  • Or-ing switches

Designers who used this product also designed with


  • IRS21271S |
    Gate Driver ICs
  • 1ED44173N01B |
    Gate Driver ICs
  • IRS4427S |
    Gate Driver ICs
  • BTS3028SDL |
    Classic HITFET™ 24V | Automotive Low-Side Switch
  • 1EDI60N12AF |
    Gate Driver ICs
  • 6ED2742S01Q |
    Gate Driver ICs
  • IRS10752L |
    Gate Driver ICs
  • IRS21271S |
    Gate Driver ICs
  • 1ED44173N01B |
    Gate Driver ICs
  • IRS4427S |
    Gate Driver ICs
  • BTS3028SDL |
    Classic HITFET™ 24V | Automotive Low-Side Switch
  • 1EDI60N12AF |
    Gate Driver ICs
  • 6ED2742S01Q |
    Gate Driver ICs
  • IRS10752L |
    Gate Driver ICs
  • IRS21271S |
    Gate Driver ICs

1
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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number IPB017N06N3-G
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0017 ohms
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