- Trained on our vast library of engineering resources.

Infineon Technologies AG 500V-950V N-Channel Power MOSFET IPA60R125P6

Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
500V-950V N-Channel Power MOSFET - IPA60R125P6 - Infineon Technologies AG
Neubiberg, Germany
500V-950V N-Channel Power MOSFET
IPA60R125P6
500V-950V N-Channel Power MOSFET IPA60R125P6
Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. Summary of Features Reduced gate charge (Q g) Higher V th Good body diode ruggedness Optimized integrated R g Improved dv/dt from 50V/ns CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology Benefits Improved effciency especially in light load condition Better efficiency in soft switching applications due to earlier turn-off Suitable for hard- & soft-switching topologies Optimized balance of efficiency and ease of use and good controllability of switching behavior High robustness and better efficiency Outstanding quality & reliability Potential Applications PFC stages for server, telecom rectifier, PC silverbox, gaming consoles PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles Applications Complete system solutions for smart TVs EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs Download Gate Driver ICs overview Designers who used this product also designed with IRS4427S | Gate Driver ICs 1EDB8275F | Gate Driver ICs 1EDN8511B | Gate Driver ICs 2EDB8259Y | Gate Driver ICs ICE3PCS03G | PFC-CCM (continuous conduction mode) ICs IPP320N20N3 G | N-Channel Power MOSFET IMW65R048M1H | Silicon Carbide MOSFET Discretes IPW60R099P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET IRLML0100 | N-Channel Power MOSFET IPP60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IRFB4110 | N-Channel Power MOSFET IPA80R310CE | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP020N06N | N-Channel Power MOSFET 2EDN8534F | Gate Driver ICs 1ED44171N01B | Gate Driver ICs 1ED44173N01B | Gate Driver ICs 1EDI20N12AF | Gate Driver ICs 2ED2101S06F | Gate Driver ICs 2ED2106S06F | Gate Driver ICs 2EDL05N06PF | Gate Driver ICs IRS4427S | Gate Driver ICs 1EDB8275F | Gate Driver ICs 1EDN8511B | Gate Driver ICs 2EDB8259Y | Gate Driver ICs ICE3PCS03G | PFC-CCM (continuous conduction mode) ICs IPP320N20N3 G | N-Channel Power MOSFET IMW65R048M1H | Silicon Carbide MOSFET Discretes IPW60R099P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3 4 5

Infineons CoolMOS™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use.


Summary of Features

  • Reduced gate charge (Q g)
  • Higher V th
  • Good body diode ruggedness
  • Optimized integrated R g
  • Improved dv/dt from 50V/ns
  • CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology

Benefits

  • Improved effciency especially in light load condition
  • Better efficiency in soft switching applications due to earlier turn-off
  • Suitable for hard- & soft-switching topologies
  • Optimized balance of efficiency and ease of use and good controllability of switching behavior
  • High robustness and better efficiency
  • Outstanding quality & reliability

Potential Applications

  • PFC stages for server, telecom rectifier, PC silverbox, gaming consoles
  • PWM stages (TTF, LLC) for server, telecom rectifier, PC silverbox, gaming consoles

Applications

  • Complete system solutions for smart TVs

EiceDRIVER™ 1EDN and 2EDN Gate Driver for MOSFETs

Download Gate Driver ICs overview


Designers who used this product also designed with


  • IRS4427S |
    Gate Driver ICs
  • 1EDB8275F |
    Gate Driver ICs
  • 1EDN8511B |
    Gate Driver ICs
  • 2EDB8259Y |
    Gate Driver ICs
  • ICE3PCS03G |
    PFC-CCM (continuous conduction mode) ICs
  • IPP320N20N3 G |
    N-Channel Power MOSFET
  • IMW65R048M1H |
    Silicon Carbide MOSFET Discretes
  • IPW60R099P6 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IRLML0100 |
    N-Channel Power MOSFET
  • IPP60R060P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IRFB4110 |
    N-Channel Power MOSFET
  • IPA80R310CE |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPP020N06N |
    N-Channel Power MOSFET
  • 2EDN8534F |
    Gate Driver ICs
  • 1ED44171N01B |
    Gate Driver ICs
  • 1ED44173N01B |
    Gate Driver ICs
  • 1EDI20N12AF |
    Gate Driver ICs
  • 2ED2101S06F |
    Gate Driver ICs
  • 2ED2106S06F |
    Gate Driver ICs
  • 2EDL05N06PF |
    Gate Driver ICs
  • IRS4427S |
    Gate Driver ICs
  • 1EDB8275F |
    Gate Driver ICs
  • 1EDN8511B |
    Gate Driver ICs
  • 2EDB8259Y |
    Gate Driver ICs
  • ICE3PCS03G |
    PFC-CCM (continuous conduction mode) ICs
  • IPP320N20N3 G |
    N-Channel Power MOSFET
  • IMW65R048M1H |
    Silicon Carbide MOSFET Discretes
  • IPW60R099P6 |
    500V-950V CoolMOS™ N-Channel Power MOSFET

1
2
3
4
5

Supplier's Site Datasheet
Specialized ICs - IPA60R125P6 - 1185977-IPA60R125P6 - Win Source Electronics
Yishun, Singapore
Specialized ICs - IPA60R125P6
1185977-IPA60R125P6
Specialized ICs - IPA60R125P6 1185977-IPA60R125P6
Manufacturer: Infineon Technologies Win Source Part Number: 1185977-IPA60R125P6 Manufacturer Homepage: www.infineon.com Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 1185977-IPA60R125P6
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited

Supplier's Site
Sheung Wan, Hong Kong
MOSFET HIGH POWER PRICE/PERFORM

MOSFET HIGH POWER PRICE/PERFORM

Supplier's Site

Technical Specifications

  Infineon Technologies AG Win Source Electronics VAST STOCK CO., LIMITED
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPA60R125P6 1185977-IPA60R125P6 IPA60R125P6
Product Name 500V-950V N-Channel Power MOSFET Specialized ICs - IPA60R125P6 MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.1250 ohms
QG 56 nC
Unlock Full Specs
to access all available technical data

Similar Products

P-Channel Power MOSFET - BSO613SPV-G - Infineon Technologies AG
Specs
Polarity P-Channel; P
Transistor Technology / Material Si/SiC
Operating Mode Enhancement
View Details
N-Channel Power MOSFET - BSZ0500NSI - Infineon Technologies AG
Infineon Technologies AG
Specs
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0015 ohms
View Details
N-Channel Power MOSFET - BSC600N25NS3-G - Infineon Technologies AG
Specs
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0600 ohms
View Details
N-Channel Power MOSFET - BSC110N15NS5 - Infineon Technologies AG
Specs
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0110 ohms
View Details
3 suppliers