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Infineon Technologies AG Silicon Carbide MOSFET Discretes IMBG120R030M1H

Description
CoolSiC™ 1200 V SiC Trench MOSFET in TO-263-7 package The CoolSiC™ 1200 V, 30 mΩ SiC MOSFET in a D2PAK-7L (TO-263-7) package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with .XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies. Summary of Features Very low switching losses Short-circuit withstand time, 3 µs Fully controllable dV/dt Benchmark gate threshold voltage, VGS(th) = 4.5 V Robustness against parasitic turn-on, 0 V turn-off gate voltage can be applied Robust body diode for hard commutation .XT interconnection technology for best-in-class thermal performance Package creepage and clearance distances, > 6.1 mm Sense pin for optimized switching performance Benefits Efficiency improvement Enabling higher frequency Increased power density Cooling effort reduction Reduction of system complexity and cost SMD package enables direct integration into PCB, with natural convection cooling without extra heatsink Applications 1-phase string inverter solutions 48 V power distribution DIN rail power supplies EV charging Industrial motor drives and controls Designers who used this product also designed with 1ED3241MC12H | Gate Driver ICs 1EDI40I12AF | Gate Driver ICs 1EDI60N12AF | Gate Driver ICs 1ED3431MC12M | Gate Driver ICs IDWD40G120C5 | CoolSiC™ Schottky Diodes 1EDI60I12AF | Gate Driver ICs XMC4400-F100K512 BA | 32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4 1ED3322MC12N | Gate Driver ICs 1ED3491MC12M | Gate Driver ICs 2EDR9259X | Gate Driver ICs 1ED3125MU12F | Gate Driver ICs 1ED3241MC12H | Gate Driver ICs 1EDI40I12AF | Gate Driver ICs 1EDI60N12AF | Gate Driver ICs 1ED3431MC12M | Gate Driver ICs IDWD40G120C5 | CoolSiC™ Schottky Diodes 1EDI60I12AF | Gate Driver ICs XMC4400-F100K512 BA | 32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4 1ED3322MC12N | Gate Driver ICs 1 2 3
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Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Discretes - IMBG120R030M1H - Infineon Technologies AG
Neubiberg, Germany
Silicon Carbide MOSFET Discretes
IMBG120R030M1H
Silicon Carbide MOSFET Discretes IMBG120R030M1H
CoolSiC™ 1200 V SiC Trench MOSFET in TO-263-7 package The CoolSiC™ 1200 V, 30 mΩ SiC MOSFET in a D2PAK-7L (TO-263-7) package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with .XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies. Summary of Features Very low switching losses Short-circuit withstand time, 3 µs Fully controllable dV/dt Benchmark gate threshold voltage, VGS(th) = 4.5 V Robustness against parasitic turn-on, 0 V turn-off gate voltage can be applied Robust body diode for hard commutation .XT interconnection technology for best-in-class thermal performance Package creepage and clearance distances, > 6.1 mm Sense pin for optimized switching performance Benefits Efficiency improvement Enabling higher frequency Increased power density Cooling effort reduction Reduction of system complexity and cost SMD package enables direct integration into PCB, with natural convection cooling without extra heatsink Applications 1-phase string inverter solutions 48 V power distribution DIN rail power supplies EV charging Industrial motor drives and controls Designers who used this product also designed with 1ED3241MC12H | Gate Driver ICs 1EDI40I12AF | Gate Driver ICs 1EDI60N12AF | Gate Driver ICs 1ED3431MC12M | Gate Driver ICs IDWD40G120C5 | CoolSiC™ Schottky Diodes 1EDI60I12AF | Gate Driver ICs XMC4400-F100K512 BA | 32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4 1ED3322MC12N | Gate Driver ICs 1ED3491MC12M | Gate Driver ICs 2EDR9259X | Gate Driver ICs 1ED3125MU12F | Gate Driver ICs 1ED3241MC12H | Gate Driver ICs 1EDI40I12AF | Gate Driver ICs 1EDI60N12AF | Gate Driver ICs 1ED3431MC12M | Gate Driver ICs IDWD40G120C5 | CoolSiC™ Schottky Diodes 1EDI60I12AF | Gate Driver ICs XMC4400-F100K512 BA | 32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4 1ED3322MC12N | Gate Driver ICs 1 2 3

CoolSiC™ 1200 V SiC Trench MOSFET in TO-263-7 package

The CoolSiC™ 1200 V, 30 mΩ SiC MOSFET in a D2PAK-7L (TO-263-7) package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with .XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies.


Summary of Features

  • Very low switching losses
  • Short-circuit withstand time, 3 µs
  • Fully controllable dV/dt
  • Benchmark gate threshold voltage, VGS(th) = 4.5 V
  • Robustness against parasitic turn-on, 0 V turn-off gate voltage can be applied
  • Robust body diode for hard commutation
  • .XT interconnection technology for best-in-class thermal performance
  • Package creepage and clearance distances, > 6.1 mm
  • Sense pin for optimized switching performance

Benefits

  • Efficiency improvement
  • Enabling higher frequency
  • Increased power density
  • Cooling effort reduction
  • Reduction of system complexity and cost
  • SMD package enables direct integration into PCB, with natural convection cooling without extra heatsink

Applications

  • 1-phase string inverter solutions
  • 48 V power distribution
  • DIN rail power supplies
  • EV charging
  • Industrial motor drives and controls

Designers who used this product also designed with


  • 1ED3241MC12H |
    Gate Driver ICs
  • 1EDI40I12AF |
    Gate Driver ICs
  • 1EDI60N12AF |
    Gate Driver ICs
  • 1ED3431MC12M |
    Gate Driver ICs
  • IDWD40G120C5 |
    CoolSiC™ Schottky Diodes
  • 1EDI60I12AF |
    Gate Driver ICs
  • XMC4400-F100K512 BA |
    32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4
  • 1ED3322MC12N |
    Gate Driver ICs
  • 1ED3491MC12M |
    Gate Driver ICs
  • 2EDR9259X |
    Gate Driver ICs
  • 1ED3125MU12F |
    Gate Driver ICs
  • 1ED3241MC12H |
    Gate Driver ICs
  • 1EDI40I12AF |
    Gate Driver ICs
  • 1EDI60N12AF |
    Gate Driver ICs
  • 1ED3431MC12M |
    Gate Driver ICs
  • IDWD40G120C5 |
    CoolSiC™ Schottky Diodes
  • 1EDI60I12AF |
    Gate Driver ICs
  • XMC4400-F100K512 BA |
    32-bit XMC4000 Industrial Microcontroller Arm® Cortex®-M4
  • 1ED3322MC12N |
    Gate Driver ICs

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IMBG120R030M1H
Product Name Silicon Carbide MOSFET Discretes
Polarity N-Channel; N
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