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Infineon Technologies AG CoolSiC™ Schottky Diodes IDWD30G120C5

Description
1200 V Silicion Carbide Schottky diode in TO-247-2 package The CoolSiC™ Schottky diodes generation 5 1200 V, 30 A is also available in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes. The expanded 8.7 mm creepage and clearance distances in the new package offer extra safety in high-pollution environments. Combined with a Si IGBT or super-junction MOSFET, for example in a Vienna rectifier stage or PFC boost stage used in 3-phase conversion systems, a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative. The output power of PFC and DC-DC stages can thus be substantially increased, by 40% or more. Other than negligible switching losses – the signature feature of SiC Schottkys – CoolSiC™ Generation 5 products come with best-in-class forward voltage (VF), the slightest increase of VF with temperature and highest surge current capability. The result is a series of products delivering market-leading efficiency and more system reliability at an attractive cost point. Summary of Features No reverse recovery current, no forward recovery voltage Temperature-independ ent switching behavior Low forward voltage even at high operating temperature Tight forward voltage distribution High surge current capability Benefits Easy plug and play with silicon diodes System efficiency improvement over Si diodes Enabling higher frequency / increased power density solutions System reliability improvement Applications EV charging Photovoltaic Switched mode power supplies (SMPS) Uninterruptible power supplies (UPS)
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CoolSiC™ Schottky Diodes - IDWD30G120C5 - Infineon Technologies AG
Neubiberg, Germany
CoolSiC™ Schottky Diodes
IDWD30G120C5
CoolSiC™ Schottky Diodes IDWD30G120C5
1200 V Silicion Carbide Schottky diode in TO-247-2 package The CoolSiC™ Schottky diodes generation 5 1200 V, 30 A is also available in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes. The expanded 8.7 mm creepage and clearance distances in the new package offer extra safety in high-pollution environments. Combined with a Si IGBT or super-junction MOSFET, for example in a Vienna rectifier stage or PFC boost stage used in 3-phase conversion systems, a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative. The output power of PFC and DC-DC stages can thus be substantially increased, by 40% or more. Other than negligible switching losses – the signature feature of SiC Schottkys – CoolSiC™ Generation 5 products come with best-in-class forward voltage (VF), the slightest increase of VF with temperature and highest surge current capability. The result is a series of products delivering market-leading efficiency and more system reliability at an attractive cost point. Summary of Features No reverse recovery current, no forward recovery voltage Temperature-independ ent switching behavior Low forward voltage even at high operating temperature Tight forward voltage distribution High surge current capability Benefits Easy plug and play with silicon diodes System efficiency improvement over Si diodes Enabling higher frequency / increased power density solutions System reliability improvement Applications EV charging Photovoltaic Switched mode power supplies (SMPS) Uninterruptible power supplies (UPS)

1200 V Silicion Carbide Schottky diode in TO-247-2 package

The CoolSiC™ Schottky diodes generation 5 1200 V, 30 A is also available in a TO-247 real 2-pin package, for easy exchange of bipolar Si diodes. The expanded 8.7 mm creepage and clearance distances in the new package offer extra safety in high-pollution environments. Combined with a Si IGBT or super-junction MOSFET, for example in a Vienna rectifier stage or PFC boost stage used in 3-phase conversion systems, a CoolSiC™ diode raises efficiency up to 1% compared to next best Si diode alternative. The output power of PFC and DC-DC stages can thus be substantially increased, by 40% or more. Other than negligible switching losses – the signature feature of SiC Schottkys – CoolSiC™ Generation 5 products come with best-in-class forward voltage (VF), the slightest increase of VF with temperature and highest surge current capability. The result is a series of products delivering market-leading efficiency and more system reliability at an attractive cost point.


Summary of Features

  • No reverse recovery current, no forward recovery voltage
  • Temperature-independent switching behavior
  • Low forward voltage even at high operating temperature
  • Tight forward voltage distribution
  • High surge current capability

Benefits

  • Easy plug and play with silicon diodes
  • System efficiency improvement over Si diodes
  • Enabling higher frequency / increased power density solutions
  • System reliability improvement

Applications

  • EV charging
  • Photovoltaic
  • Switched mode power supplies (SMPS)
  • Uninterruptible power supplies (UPS)
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Schottky Diodes
Product Number IDWD30G120C5
Product Name CoolSiC™ Schottky Diodes
Life Cycle Stage active and preferred
Package TO-247; PG-TO247-2
RoHS Compliant RoHS
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