CoolSiC™ generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Q c x V f). The CoolSiC™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.
Summary of Features
V br at 650V
Improved figure of merit (Q c x V f)
No reverse recovery charge
Soft switching reverse recovery waveform
Temperature independent switching behavior
High operating temperature (T j max 175°C)
Improved surge capability
Pb-free lead plating
Benefits
Higher safety margin against overvoltage and complements CoolMOS™ offer
Improved efficiency over all load conditions
Increased efficiency compared to Silicon Diode alternatives
Reduced EMI compared to snappier Silicon diode reverse recovery waveform
Highly stable switching performance
Reduced cooling requirements
Reduced risks of thermal runaway
RoHS compliant
Very high quality and high volume manufacturing capability
Potential Applications
Solar
Uninterruptible power supply (UPS)
Motor control and drives
Applications
48 V intermediate bus converter (IBC)
Bringing a whole new lifestyle and health experience to today’s connected citizen
Commercial HVAC
Uninterruptible power supplies (UPS)
Designers who used this product also designed with
BSC093N15NS5 | N-Channel Power MOSFET
IRF7815 | N-Channel Power MOSFET
IKW40N65H5 | IGBT discretes
IDH02G120C5 | CoolSiC™ Schottky Diodes
IKW40N65WR5 | IGBT discretes
IPW60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
ICE3PCS01G | PFC-CCM (continuous conduction mode) ICs
IDK10G120C5 | CoolSiC™ Schottky Diodes
BSC093N15NS5 | N-Channel Power MOSFET
IRF7815 | N-Channel Power MOSFET
IKW40N65H5 | IGBT discretes
IDH02G120C5 | CoolSiC™ Schottky Diodes
IKW40N65WR5 | IGBT discretes
IPW60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
ICE3PCS01G | PFC-CCM (continuous conduction mode) ICs
IDK10G120C5 | CoolSiC™ Schottky Diodes
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CoolSiC™ generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Q c x V f).
The CoolSiC™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.
Summary of Features
- V br at 650V
- Improved figure of merit (Q c x V f)
- No reverse recovery charge
- Soft switching reverse recovery waveform
- Temperature independent switching behavior
- High operating temperature (T j max 175°C)
- Improved surge capability
- Pb-free lead plating
Benefits
- Higher safety margin against overvoltage and complements CoolMOS™ offer
- Improved efficiency over all load conditions
- Increased efficiency compared to Silicon Diode alternatives
- Reduced EMI compared to snappier Silicon diode reverse recovery waveform
- Highly stable switching performance
- Reduced cooling requirements
- Reduced risks of thermal runaway
- RoHS compliant
- Very high quality and high volume manufacturing capability
Potential Applications
- Solar
- Uninterruptible power supply (UPS)
- Motor control and drives
Applications
- 48 V intermediate bus converter (IBC)
- Bringing a whole new lifestyle and health experience to today’s connected citizen
- Commercial HVAC
- Uninterruptible power supplies (UPS)
Designers who used this product also designed with
- BSC093N15NS5 |
N-Channel Power MOSFET
- IRF7815 |
N-Channel Power MOSFET
- IKW40N65H5 |
IGBT discretes
- IDH02G120C5 |
CoolSiC™ Schottky Diodes
- IKW40N65WR5 |
IGBT discretes
- IPW60R060P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- ICE3PCS01G |
PFC-CCM (continuous conduction mode) ICs
- IDK10G120C5 |
CoolSiC™ Schottky Diodes
- BSC093N15NS5 |
N-Channel Power MOSFET
- IRF7815 |
N-Channel Power MOSFET
- IKW40N65H5 |
IGBT discretes
- IDH02G120C5 |
CoolSiC™ Schottky Diodes
- IKW40N65WR5 |
IGBT discretes
- IPW60R060P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- ICE3PCS01G |
PFC-CCM (continuous conduction mode) ICs
- IDK10G120C5 |
CoolSiC™ Schottky Diodes
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