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Infineon Technologies AG CoolSiC™ Schottky Diodes IDM08G120C5

Description
1200 V Silicion Carbide Schottky diode in a DPAK real2pin package The CoolSiCâ„¢ Schottky diode generation 5 1200 V, 8 A in a DPAK real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point. Summary of Features Best-in-class forward voltage (VF) No reverse recovery charge Mild positive temperature dependency of VF Best-in-class surge current capability Excellent thermal performance Benefits Highest system efficiency Improved system efficiency at low switching frequencies Increased power density at high switching frequencies Higher system reliability Reduced EMI Applications Motor Control Photovoltaic Uninterruptible power supplies (UPS)
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Suppliers

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CoolSiC™ Schottky Diodes - IDM08G120C5 - Infineon Technologies AG
Neubiberg, Germany
CoolSiC™ Schottky Diodes
IDM08G120C5
CoolSiC™ Schottky Diodes IDM08G120C5
1200 V Silicion Carbide Schottky diode in a DPAK real2pin package The CoolSiCâ„¢ Schottky diode generation 5 1200 V, 8 A in a DPAK real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point. Summary of Features Best-in-class forward voltage (VF) No reverse recovery charge Mild positive temperature dependency of VF Best-in-class surge current capability Excellent thermal performance Benefits Highest system efficiency Improved system efficiency at low switching frequencies Increased power density at high switching frequencies Higher system reliability Reduced EMI Applications Motor Control Photovoltaic Uninterruptible power supplies (UPS)

1200 V Silicion Carbide Schottky diode in a DPAK real2pin package

The CoolSiC™ Schottky diode generation 5 1200 V, 8 A in a DPAK real2pin package, presents a leading edge technology for SiC Schottky Barrier diodes. The thin wafer technology, already introduced with G2, is now combined with a new merged pn junction improving diode surge current capabilities. The result is a series of products delivering market leading efficiency and more system reliability at an attractive cost point.


Summary of Features

  • Best-in-class forward voltage (VF)
  • No reverse recovery charge
  • Mild positive temperature dependency of VF
  • Best-in-class surge current capability
  • Excellent thermal performance

Benefits

  • Highest system efficiency
  • Improved system efficiency at low switching frequencies
  • Increased power density at high switching frequencies
  • Higher system reliability
  • Reduced EMI

Applications

  • Motor Control
  • Photovoltaic
  • Uninterruptible power supplies (UPS)
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Schottky Diodes
Product Number IDM08G120C5
Product Name CoolSiC™ Schottky Diodes
Life Cycle Stage active and preferred
Package DPAK; PG-TO252-2
RoHS Compliant RoHS
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