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Infineon Technologies AG CoolSiC™ Schottky Diodes IDH12G65C6

Description
Unparalleled efficiency and price performance The CoolSiC™ Schottky diode 650V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Q c x V F). Summary of Features The lowest V F: 1.25V Best-in-class figure of merit (Q c x V F) No reverse recovery charge Temperature independent switching behavior High dv/dt ruggedness Optimized thermal behavior Benefits Improved system efficiency over all load conditions Increased system power density Reduced cooling requirements and increased system reliability Enables extremely fast switching Easy and effective match with CoolMOS™ 7 families Optimal price performance Potential Applications Server Telecom PC power Solar Lighting Applications 48 V power distribution Adapters and chargers DIN rail power supplies EV Thermal Management Telecommunication infrastructure Designers who used this product also designed with IRLML2803TRPBF-1 | N-Channel Power MOSFET IPP030N10N3 G | N-Channel Power MOSFET 2EDN7524F | Gate Driver ICs IPP041N12N3 G | N-Channel Power MOSFET ICE2QR2280G-1 | Quasi Resonant CoolSET™ 2EDN7524R | Gate Driver ICs IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPZ65R045C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 2EDS8265H | Gate Driver ICs BSC007N04LS6 | N-Channel Power MOSFET IPL60R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW65R045C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPZ60R060C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC010N04LS | N-Channel Power MOSFET IPW60R040C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSZ013NE2LS5I | N-Channel Power MOSFET IPL60R125C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE3PCS02G | PFC-CCM (continuous conduction mode) ICs BSC016N06NS | N-Channel Power MOSFET IRLML2803TRPBF-1 | N-Channel Power MOSFET IPP030N10N3 G | N-Channel Power MOSFET 2EDN7524F | Gate Driver ICs IPP041N12N3 G | N-Channel Power MOSFET ICE2QR2280G-1 | Quasi Resonant CoolSET™ 2EDN7524R | Gate Driver ICs IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPZ65R045C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3 4 5
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Suppliers

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Product
Description
Supplier Links
CoolSiC™ Schottky Diodes - IDH12G65C6 - Infineon Technologies AG
Neubiberg, Germany
CoolSiC™ Schottky Diodes
IDH12G65C6
CoolSiC™ Schottky Diodes IDH12G65C6
Unparalleled efficiency and price performance The CoolSiC™ Schottky diode 650V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Q c x V F). Summary of Features The lowest V F: 1.25V Best-in-class figure of merit (Q c x V F) No reverse recovery charge Temperature independent switching behavior High dv/dt ruggedness Optimized thermal behavior Benefits Improved system efficiency over all load conditions Increased system power density Reduced cooling requirements and increased system reliability Enables extremely fast switching Easy and effective match with CoolMOS™ 7 families Optimal price performance Potential Applications Server Telecom PC power Solar Lighting Applications 48 V power distribution Adapters and chargers DIN rail power supplies EV Thermal Management Telecommunication infrastructure Designers who used this product also designed with IRLML2803TRPBF-1 | N-Channel Power MOSFET IPP030N10N3 G | N-Channel Power MOSFET 2EDN7524F | Gate Driver ICs IPP041N12N3 G | N-Channel Power MOSFET ICE2QR2280G-1 | Quasi Resonant CoolSET™ 2EDN7524R | Gate Driver ICs IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPZ65R045C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 2EDS8265H | Gate Driver ICs BSC007N04LS6 | N-Channel Power MOSFET IPL60R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPW65R045C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPZ60R060C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC010N04LS | N-Channel Power MOSFET IPW60R040C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSZ013NE2LS5I | N-Channel Power MOSFET IPL60R125C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE3PCS02G | PFC-CCM (continuous conduction mode) ICs BSC016N06NS | N-Channel Power MOSFET IRLML2803TRPBF-1 | N-Channel Power MOSFET IPP030N10N3 G | N-Channel Power MOSFET 2EDN7524F | Gate Driver ICs IPP041N12N3 G | N-Channel Power MOSFET ICE2QR2280G-1 | Quasi Resonant CoolSET™ 2EDN7524R | Gate Driver ICs IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPZ65R045C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3 4 5

Unparalleled efficiency and price performance

The CoolSiC™ Schottky diode 650V G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes, fully leveraging all advantages of SiC over silicon. An Infineon proprietary innovative soldering process is combined with a more compact design, thin-wafer technology and a novel Schottky metal system. The result is a family of products with improved efficiency over all load conditions, resulting from a best-in-class figure of merit (Q c x V F).


Summary of Features

  • The lowest V F: 1.25V
  • Best-in-class figure of merit (Q c x V F)
  • No reverse recovery charge
  • Temperature independent switching behavior
  • High dv/dt ruggedness
  • Optimized thermal behavior

Benefits

  • Improved system efficiency over all load conditions
  • Increased system power density
  • Reduced cooling requirements and increased system reliability
  • Enables extremely fast switching
  • Easy and effective match with CoolMOS™ 7 families
  • Optimal price performance

Potential Applications

  • Server
  • Telecom
  • PC power
  • Solar
  • Lighting

Applications

  • 48 V power distribution
  • Adapters and chargers
  • DIN rail power supplies
  • EV Thermal Management
  • Telecommunication infrastructure

Designers who used this product also designed with


  • IRLML2803TRPBF-1 |
    N-Channel Power MOSFET
  • IPP030N10N3 G |
    N-Channel Power MOSFET
  • 2EDN7524F |
    Gate Driver ICs
  • IPP041N12N3 G |
    N-Channel Power MOSFET
  • ICE2QR2280G-1 |
    Quasi Resonant CoolSET™
  • 2EDN7524R |
    Gate Driver ICs
  • IPT60R022S7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPZ65R045C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • 2EDS8265H |
    Gate Driver ICs
  • BSC007N04LS6 |
    N-Channel Power MOSFET
  • IPL60R060CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPW65R045C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPZ60R060C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC010N04LS |
    N-Channel Power MOSFET
  • IPW60R040C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSZ013NE2LS5I |
    N-Channel Power MOSFET
  • IPL60R125C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • ICE3PCS02G |
    PFC-CCM (continuous conduction mode) ICs
  • BSC016N06NS |
    N-Channel Power MOSFET
  • IRLML2803TRPBF-1 |
    N-Channel Power MOSFET
  • IPP030N10N3 G |
    N-Channel Power MOSFET
  • 2EDN7524F |
    Gate Driver ICs
  • IPP041N12N3 G |
    N-Channel Power MOSFET
  • ICE2QR2280G-1 |
    Quasi Resonant CoolSET™
  • 2EDN7524R |
    Gate Driver ICs
  • IPT60R022S7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPZ65R045C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Schottky Diodes
Product Number IDH12G65C6
Product Name CoolSiC™ Schottky Diodes
Life Cycle Stage active and preferred
Package TO-220; PG-TO220-2
RoHS Compliant RoHS
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