Infineon Technologies AG CoolSiC™ Schottky Diodes IDH06G65C5

Description
CoolSiC™ Schottky diode 650 V G5 in TO-220 real2pin The CoolSiC™ Schottky diode 650 V, 6 A generation 5 in TO-220 real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f). Summary of Features Improved figure of merit (Q c x V f) No reverse recovery charge Soft switching reverse recovery waveform Temperature independent switching behavior High operating temperature (T j max 175°C) Improved surge capability Pb-free lead plating Benefits Higher safety margin against overvoltage and complements CoolMOS™ offer Improved efficiency over all load conditions Increased efficiency compared to Silicon Diode alternatives Reduced EMI compared to snappier Silicon diode reverse recovery waveform Highly stable switching performance Reduced cooling requirements Reduced risks of thermal runaway RoHS compliant Very high quality and high volume manufacturing capability Potential Applications Solar UPS Motor control and drives Applications 48 V intermediate bus converter (IBC) Automotive Cordless power tools and outdoor power equipment Edge computing Security Camera and Video Doorbell Designers who used this product also designed with ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSC010N04LS | N-Channel Power MOSFET IPW60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IRFU3607 | N-Channel Power MOSFET BSC016N06NS | N-Channel Power MOSFET IPB60R099P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 2EDS8165H | Gate driver ICs IPW60R125P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET 2EDL8124G | Gate driver ICs IPA60R180P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPA60R099P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC042NE7NS3 G | N-Channel Power MOSFET IPW60R120P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP60R180CM8 | 600 V CoolMOS™ 8 BSC040N08NS5 | N-Channel Power MOSFET IPD70R360P7S | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSC010N04LS | N-Channel Power MOSFET IPW60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IRFU3607 | N-Channel Power MOSFET BSC016N06NS | N-Channel Power MOSFET IPB60R099P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 2EDS8165H | Gate driver ICs IPW60R125P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3 4 5
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Description
CoolSiC™ Schottky diode 650 V G5 in TO-220 real2pin The CoolSiC™ Schottky diode 650 V, 6 A generation 5 in TO-220 real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f). Summary of Features Improved figure of merit (Q c x V f) No reverse recovery charge Soft switching reverse recovery waveform Temperature independent switching behavior High operating temperature (T j max 175°C) Improved surge capability Pb-free lead plating Benefits Higher safety margin against overvoltage and complements CoolMOS™ offer Improved efficiency over all load conditions Increased efficiency compared to Silicon Diode alternatives Reduced EMI compared to snappier Silicon diode reverse recovery waveform Highly stable switching performance Reduced cooling requirements Reduced risks of thermal runaway RoHS compliant Very high quality and high volume manufacturing capability Potential Applications Solar UPS Motor control and drives Applications 48 V intermediate bus converter (IBC) Automotive Cordless power tools and outdoor power equipment Edge computing Security Camera and Video Doorbell Designers who used this product also designed with ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSC010N04LS | N-Channel Power MOSFET IPW60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IRFU3607 | N-Channel Power MOSFET BSC016N06NS | N-Channel Power MOSFET IPB60R099P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 2EDS8165H | Gate driver ICs IPW60R125P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET 2EDL8124G | Gate driver ICs IPA60R180P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPA60R099P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC042NE7NS3 G | N-Channel Power MOSFET IPW60R120P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP60R180CM8 | 600 V CoolMOS™ 8 BSC040N08NS5 | N-Channel Power MOSFET IPD70R360P7S | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSC010N04LS | N-Channel Power MOSFET IPW60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IRFU3607 | N-Channel Power MOSFET BSC016N06NS | N-Channel Power MOSFET IPB60R099P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 2EDS8165H | Gate driver ICs IPW60R125P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3 4 5
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Suppliers

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Product
Description
Supplier Links
CoolSiC™ Schottky Diodes - IDH06G65C5 - Infineon Technologies AG
Neubiberg, Germany
CoolSiC™ Schottky Diodes
IDH06G65C5
CoolSiC™ Schottky Diodes IDH06G65C5
CoolSiC™ Schottky diode 650 V G5 in TO-220 real2pin The CoolSiC™ Schottky diode 650 V, 6 A generation 5 in TO-220 real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f). Summary of Features Improved figure of merit (Q c x V f) No reverse recovery charge Soft switching reverse recovery waveform Temperature independent switching behavior High operating temperature (T j max 175°C) Improved surge capability Pb-free lead plating Benefits Higher safety margin against overvoltage and complements CoolMOS™ offer Improved efficiency over all load conditions Increased efficiency compared to Silicon Diode alternatives Reduced EMI compared to snappier Silicon diode reverse recovery waveform Highly stable switching performance Reduced cooling requirements Reduced risks of thermal runaway RoHS compliant Very high quality and high volume manufacturing capability Potential Applications Solar UPS Motor control and drives Applications 48 V intermediate bus converter (IBC) Automotive Cordless power tools and outdoor power equipment Edge computing Security Camera and Video Doorbell Designers who used this product also designed with ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSC010N04LS | N-Channel Power MOSFET IPW60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IRFU3607 | N-Channel Power MOSFET BSC016N06NS | N-Channel Power MOSFET IPB60R099P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 2EDS8165H | Gate driver ICs IPW60R125P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET 2EDL8124G | Gate driver ICs IPA60R180P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPA60R099P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC042NE7NS3 G | N-Channel Power MOSFET IPW60R120P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPP60R180CM8 | 600 V CoolMOS™ 8 BSC040N08NS5 | N-Channel Power MOSFET IPD70R360P7S | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSC010N04LS | N-Channel Power MOSFET IPW60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IRFU3607 | N-Channel Power MOSFET BSC016N06NS | N-Channel Power MOSFET IPB60R099P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 2EDS8165H | Gate driver ICs IPW60R125P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3 4 5

CoolSiC™ Schottky diode 650 V G5 in TO-220 real2pin

The CoolSiC™ Schottky diode 650 V, 6 A generation 5 in TO-220 real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f).


Summary of Features

  • Improved figure of merit (Q c x V f)
  • No reverse recovery charge
  • Soft switching reverse recovery waveform
  • Temperature independent switching behavior
  • High operating temperature (T j max 175°C)
  • Improved surge capability
  • Pb-free lead plating

Benefits

  • Higher safety margin against overvoltage and complements CoolMOS™ offer
  • Improved efficiency over all load conditions
  • Increased efficiency compared to Silicon Diode alternatives
  • Reduced EMI compared to snappier Silicon diode reverse recovery waveform
  • Highly stable switching performance
  • Reduced cooling requirements
  • Reduced risks of thermal runaway
  • RoHS compliant
  • Very high quality and high volume manufacturing capability

Potential Applications

  • Solar
  • UPS
  • Motor control and drives

Applications

  • 48 V intermediate bus converter (IBC)
  • Automotive
  • Cordless power tools and outdoor power equipment
  • Edge computing
  • Security Camera and Video Doorbell

Designers who used this product also designed with


  • ICE2QR2280G-1 |
    CoolSET™ Quasi Resonant
  • BSC010N04LS |
    N-Channel Power MOSFET
  • IPW60R060P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IRFU3607 |
    N-Channel Power MOSFET
  • BSC016N06NS |
    N-Channel Power MOSFET
  • IPB60R099P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • 2EDS8165H |
    Gate driver ICs
  • IPW60R125P6 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • 2EDL8124G |
    Gate driver ICs
  • IPA60R180P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPA60R099P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC042NE7NS3 G |
    N-Channel Power MOSFET
  • IPW60R120P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPP60R180CM8 |
    600 V CoolMOS™ 8
  • BSC040N08NS5 |
    N-Channel Power MOSFET
  • IPD70R360P7S |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPL60R060CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • ICE2QR2280G-1 |
    CoolSET™ Quasi Resonant
  • BSC010N04LS |
    N-Channel Power MOSFET
  • IPW60R060P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IRFU3607 |
    N-Channel Power MOSFET
  • BSC016N06NS |
    N-Channel Power MOSFET
  • IPB60R099P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • 2EDS8165H |
    Gate driver ICs
  • IPW60R125P6 |
    500V-950V CoolMOS™ N-Channel Power MOSFET

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Schottky Diodes
Product Number IDH06G65C5
Product Name CoolSiC™ Schottky Diodes
Life Cycle Stage active and preferred
Package TO-220; PG-TO220-2
RoHS Compliant RoHS
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