CoolSiC™ Schottky diode 650 V G5 in TO-220 real2pin
The CoolSiC™ Schottky diode 650 V, 6 A generation 5 in TO-220 real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f).
Summary of Features
Improved figure of merit (Q c x V f)
No reverse recovery charge
Soft switching reverse recovery waveform
Temperature independent switching behavior
High operating temperature (T j max 175°C)
Improved surge capability
Pb-free lead plating
Benefits
Higher safety margin against overvoltage and complements CoolMOS™ offer
Improved efficiency over all load conditions
Increased efficiency compared to Silicon Diode alternatives
Reduced EMI compared to snappier Silicon diode reverse recovery waveform
Highly stable switching performance
Reduced cooling requirements
Reduced risks of thermal runaway
RoHS compliant
Very high quality and high volume manufacturing capability
Potential Applications
Solar
UPS
Motor control and drives
Applications
48 V intermediate bus converter (IBC)
Automotive
Cordless power tools and outdoor power equipment
Edge computing
Security Camera and Video Doorbell
Designers who used this product also designed with
ICE2QR2280G-1 | CoolSET™ Quasi Resonant
BSC010N04LS | N-Channel Power MOSFET
IPW60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IRFU3607 | N-Channel Power MOSFET
BSC016N06NS | N-Channel Power MOSFET
IPB60R099P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
2EDS8165H | Gate driver ICs
IPW60R125P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET
2EDL8124G | Gate driver ICs
IPA60R180P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPA60R099P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
BSC042NE7NS3 G | N-Channel Power MOSFET
IPW60R120P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPP60R180CM8 | 600 V CoolMOS™ 8
BSC040N08NS5 | N-Channel Power MOSFET
IPD70R360P7S | 500V-950V CoolMOS™ N-Channel Power MOSFET
IPL60R060CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
ICE2QR2280G-1 | CoolSET™ Quasi Resonant
BSC010N04LS | N-Channel Power MOSFET
IPW60R060P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
IRFU3607 | N-Channel Power MOSFET
BSC016N06NS | N-Channel Power MOSFET
IPB60R099P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET
2EDS8165H | Gate driver ICs
IPW60R125P6 | 500V-950V CoolMOS™ N-Channel Power MOSFET
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CoolSiC™ Schottky diode 650 V G5 in TO-220 real2pin
The CoolSiC™ Schottky diode 650 V, 6 A generation 5 in TO-220 real2pin package presents a leading-edge technology for SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3, is now combined with a new, more compact design and thin wafer technology. The result is a new family of products showing improved efficiency over all load conditions, coming from both the improved thermal characteristics and a lower figure of merit (Q c x V f).
Summary of Features
- Improved figure of merit (Q c x V f)
- No reverse recovery charge
- Soft switching reverse recovery waveform
- Temperature independent switching behavior
- High operating temperature (T j max 175°C)
- Improved surge capability
- Pb-free lead plating
Benefits
- Higher safety margin against overvoltage and complements CoolMOS™ offer
- Improved efficiency over all load conditions
- Increased efficiency compared to Silicon Diode alternatives
- Reduced EMI compared to snappier Silicon diode reverse recovery waveform
- Highly stable switching performance
- Reduced cooling requirements
- Reduced risks of thermal runaway
- RoHS compliant
- Very high quality and high volume manufacturing capability
Potential Applications
- Solar
- UPS
- Motor control and drives
Applications
- 48 V intermediate bus converter (IBC)
- Automotive
- Cordless power tools and outdoor power equipment
- Edge computing
- Security Camera and Video Doorbell
Designers who used this product also designed with
- ICE2QR2280G-1 |
CoolSET™ Quasi Resonant
- BSC010N04LS |
N-Channel Power MOSFET
- IPW60R060P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IRFU3607 |
N-Channel Power MOSFET
- BSC016N06NS |
N-Channel Power MOSFET
- IPB60R099P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- 2EDS8165H |
Gate driver ICs
- IPW60R125P6 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- 2EDL8124G |
Gate driver ICs
- IPA60R180P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPA60R099P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- BSC042NE7NS3 G |
N-Channel Power MOSFET
- IPW60R120P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPP60R180CM8 |
600 V CoolMOS™ 8
- BSC040N08NS5 |
N-Channel Power MOSFET
- IPD70R360P7S |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IPL60R060CFD7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- ICE2QR2280G-1 |
CoolSET™ Quasi Resonant
- BSC010N04LS |
N-Channel Power MOSFET
- IPW60R060P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- IRFU3607 |
N-Channel Power MOSFET
- BSC016N06NS |
N-Channel Power MOSFET
- IPB60R099P7 |
500V-950V CoolMOS™ N-Channel Power MOSFET
- 2EDS8165H |
Gate driver ICs
- IPW60R125P6 |
500V-950V CoolMOS™ N-Channel Power MOSFET
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