Infineon Technologies AG Silicon Diodes IDB18E120

The 1200 V, 18 A emitter controlled silicon power diode in a D2PAK TO-263 package displays excellent softness and VF behaviour and is qualified with a T _j(max) of 150°C. The diodes are also available halogen-free according to IEC61249-2-21.

Summary of Features

• Lowest V _F values
• Softest diodes available on the market
• T _j(max) of 150°C
• Qualified according to JEDEC Standard
• Cooler packages and higher efficiency
• Excellent EMI behavior
• Excellent trade-off between cost and performance
• Low conduction losses
• Easy paralleling

Potential Applications

DIODE GEN PURP 1.2KV 31A 14TSSOP Product overview: IDB18E120 from Infineon Technologies is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and electronic circuit reliability. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.2KV, 31A. Search-friendly keywords include diode, rectifier, Schottky, switching diode, 1.2KV, 31A, Diode and Rectifier, Single Diodes. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 280-IDB18E120 can be used for catalog matching and distributor lookup.

DIODE GEN PURP 1.2KV 31A 14TSSOP

Manufacturer: Infineon Technologies
Win Source Part Number: 1183851-IDB18E120
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance