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Infineon Technologies AG Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUCN04S7N005 IAUCN04S7N005

Description
Infineon introduces its latest OptiMOS™ 7 40 V power MOS technology in the 5x6 mm2 SS08 leadless package with highest quality level and robustness for automotive applications A portfolio of 16 products (RDS (on) max from 0.4 mΩ to 3.0 mΩ which enables the best product fit in the applications. All of this enables the Best-in-Class product FOM (RDS (on) x Qg) and performance on the market Summary of Features OptiMOS™ 7 power MOSFET for automotive applications Very low Ron*A High Avalanche capability High SOA ruggedness Fast switching times (turn on/off) N-channel – Enhancement mode – Normal Level Extended qualification beyond AEC-Q101 Enhanced electrical testing Robust design MSL1 up to 260°C peak reflow 175°C operating temperature Low package resistance and inductance Excellent thermal performance Industry's lowest FOM (RDS (on) x Qg) Benefits High power efficiency Increased design ruggedness for easy design Optimized switching performance Small footprint & efficient cooling High quality product design for Automotive High quality FE&BE production for Automotive Potential Applications Electric power steering Braking systems Power disconnect switches in zonal architectures Battery management E-fuse boxes DC/DC All Automotive BLDC drives in a wide variety and power class
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Suppliers

Company
Product
Description
Supplier Links
Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUCN04S7N005 - IAUCN04S7N005 - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUCN04S7N005
IAUCN04S7N005
Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUCN04S7N005 IAUCN04S7N005
Infineon introduces its latest OptiMOS™ 7 40 V power MOS technology in the 5x6 mm2 SS08 leadless package with highest quality level and robustness for automotive applications A portfolio of 16 products (RDS (on) max from 0.4 mΩ to 3.0 mΩ which enables the best product fit in the applications. All of this enables the Best-in-Class product FOM (RDS (on) x Qg) and performance on the market Summary of Features OptiMOS™ 7 power MOSFET for automotive applications Very low Ron*A High Avalanche capability High SOA ruggedness Fast switching times (turn on/off) N-channel – Enhancement mode – Normal Level Extended qualification beyond AEC-Q101 Enhanced electrical testing Robust design MSL1 up to 260°C peak reflow 175°C operating temperature Low package resistance and inductance Excellent thermal performance Industry's lowest FOM (RDS (on) x Qg) Benefits High power efficiency Increased design ruggedness for easy design Optimized switching performance Small footprint & efficient cooling High quality product design for Automotive High quality FE&BE production for Automotive Potential Applications Electric power steering Braking systems Power disconnect switches in zonal architectures Battery management E-fuse boxes DC/DC All Automotive BLDC drives in a wide variety and power class

Infineon introduces its latest OptiMOS™ 7 40 V power MOS technology in the 5x6 mm2 SS08 leadless package with highest quality level and robustness for automotive applications

A portfolio of 16 products (RDS (on) max from 0.4 mΩ to 3.0 mΩ which enables the best product fit in the applications.

All of this enables the Best-in-Class product FOM (RDS (on) x Qg) and performance on the market


Summary of Features

  • OptiMOS™ 7 power MOSFET for automotive applications
  • Very low Ron*A
  • High Avalanche capability
  • High SOA ruggedness
  • Fast switching times (turn on/off)
  • N-channel – Enhancement mode – Normal Level
  • Extended qualification beyond AEC-Q101
  • Enhanced electrical testing
  • Robust design
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Low package resistance and inductance
  • Excellent thermal performance
  • Industry's lowest FOM (RDS (on) x Qg)

Benefits

  • High power efficiency
  • Increased design ruggedness for easy design
  • Optimized switching performance
  • Small footprint & efficient cooling
  • High quality product design for Automotive
  • High quality FE&BE production for Automotive

Potential Applications

  • Electric power steering
  • Braking systems
  • Power disconnect switches in zonal architectures
  • Battery management
  • E-fuse boxes
  • DC/DC
  • All Automotive BLDC drives in a wide variety and power class
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number IAUCN04S7N005
Product Name Power - MOSFET (Si/SiC) - Automotive MOSFET - IAUCN04S7N005
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
VGS(off) 2.2 to 3 volts
rDS(on) 5.50E-4 ohms
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