Infineon Technologies AG F-RAM (Ferroelectric RAM) FM25V10-GTR

  • F-RAM (Ferroelectric RAM) - FM25V10-GTR - Infineon Technologies AG
    Infineon Technologies AG
  • Memory - FM25V10-GTR - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • FM25V10-GTR - Rochester Electronics
    Rochester Electronics
  • Memory - 448-FM25V10-GTR-ND - DigiKey
    DigiKey
  • Memory - 448-FM25V10-GTRDKR-ND - DigiKey
    DigiKey
  • Memory - 448-FM25V10-GTRCT-ND - DigiKey
    DigiKey
  • F-Ram, 1Mbit, Spi, Soic-8; Memory Size Cypress Infineon Technologies - 41AH7451 - Newark, An Avnet Company
    Newark, An Avnet Company
  • F-Ram, 1Mbit, Spi, Soic-8; Memory Size Cypress Infineon Technologies - 49AC3738 - Newark, An Avnet Company
    Newark, An Avnet Company
  • Memory - FM25V10-GTR - Lingto Electronic Limited
    Lingto Electronic Limited
Description
The FM25V10-GTR is a 1-Mbit nonvolatile memory employing advanced ferroelectric technology, providing reliable data retention for 151 years. With write operations at bus speed and substantial endurance, it is ideal for applications requiring frequent or rapid writes, such as data collection and industrial controls, addressing the limitations of serial flash and EEPROM. Summary of Features 1-Mbit F-RAM logically organized as 128K × 8 High-endurance 100 trillion (1014) read/writes 151-year data retention NoDelay™ writes Advanced high-reliability ferroelectric process Very fast serial peripheral interface (SPI) Sophisticated write protection scheme Device ID and Serial Number Low power consumption Low-voltage operation: VDD = 2.0 V to 3.6 V Industrial temperature: –40 °C to +85 °C Restriction of hazardous substances (RoHS) compliant Applications Domestic robots Industrial automation Programmable logic controller (PLC) Secondary power distribution system Uninterruptible power supplies (UPS) Designers who used this product also designed with IPZA65R029CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET S25FL256SAGMFB003 | Quad SPI Flash IDH05G120C5 | CoolSiC™ Schottky Diodes IPD60R145CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET S25FL128SDPMFV000 | Quad SPI Flash IPL65R195C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET S25FL256SAGMFIG11 | Quad SPI Flash IDL08G65C5 | CoolSiC™ Schottky Diodes IKZA50N65SS5 | IGBT discretes IPZA65R029CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET S25FL256SAGMFB003 | Quad SPI Flash IDH05G120C5 | CoolSiC™ Schottky Diodes IPD60R145CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET S25FL128SDPMFV000 | Quad SPI Flash IPL65R195C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET S25FL256SAGMFIG11 | Quad SPI Flash IDL08G65C5 | CoolSiC™ Schottky Diodes 1 2 3
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Company
Product
Description
Supplier Links
F-RAM (Ferroelectric RAM) - FM25V10-GTR - Infineon Technologies AG
Infineon Technologies AG
Neubiberg, Germany
F-RAM (Ferroelectric RAM)
FM25V10-GTR
F-RAM (Ferroelectric RAM) FM25V10-GTR
The FM25V10-GTR is a 1-Mbit nonvolatile memory employing advanced ferroelectric technology, providing reliable data retention for 151 years. With write operations at bus speed and substantial endurance, it is ideal for applications requiring frequent or rapid writes, such as data collection and industrial controls, addressing the limitations of serial flash and EEPROM. Summary of Features 1-Mbit F-RAM logically organized as 128K × 8 High-endurance 100 trillion (1014) read/writes 151-year data retention NoDelay™ writes Advanced high-reliability ferroelectric process Very fast serial peripheral interface (SPI) Sophisticated write protection scheme Device ID and Serial Number Low power consumption Low-voltage operation: VDD = 2.0 V to 3.6 V Industrial temperature: –40 °C to +85 °C Restriction of hazardous substances (RoHS) compliant Applications Domestic robots Industrial automation Programmable logic controller (PLC) Secondary power distribution system Uninterruptible power supplies (UPS) Designers who used this product also designed with IPZA65R029CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET S25FL256SAGMFB003 | Quad SPI Flash IDH05G120C5 | CoolSiC™ Schottky Diodes IPD60R145CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET S25FL128SDPMFV000 | Quad SPI Flash IPL65R195C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET S25FL256SAGMFIG11 | Quad SPI Flash IDL08G65C5 | CoolSiC™ Schottky Diodes IKZA50N65SS5 | IGBT discretes IPZA65R029CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET S25FL256SAGMFB003 | Quad SPI Flash IDH05G120C5 | CoolSiC™ Schottky Diodes IPD60R145CFD7 | 500V-950V CoolMOS™ N-Channel Power MOSFET S25FL128SDPMFV000 | Quad SPI Flash IPL65R195C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET S25FL256SAGMFIG11 | Quad SPI Flash IDL08G65C5 | CoolSiC™ Schottky Diodes 1 2 3

The FM25V10-GTR is a 1-Mbit nonvolatile memory employing advanced ferroelectric technology, providing reliable data retention for 151 years. With write operations at bus speed and substantial endurance, it is ideal for applications requiring frequent or rapid writes, such as data collection and industrial controls, addressing the limitations of serial flash and EEPROM.


Summary of Features

  • 1-Mbit F-RAM logically organized as 128K × 8
  • High-endurance 100 trillion (1014) read/writes
  • 151-year data retention
  • NoDelay™ writes
  • Advanced high-reliability ferroelectric process
  • Very fast serial peripheral interface (SPI)
  • Sophisticated write protection scheme
  • Device ID and Serial Number
  • Low power consumption
  • Low-voltage operation: VDD = 2.0 V to 3.6 V
  • Industrial temperature: –40 °C to +85 °C
  • Restriction of hazardous substances (RoHS) compliant

Applications

  • Domestic robots
  • Industrial automation
  • Programmable logic controller (PLC)
  • Secondary power distribution system
  • Uninterruptible power supplies (UPS)

Designers who used this product also designed with


  • IPZA65R029CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • S25FL256SAGMFB003 |
    Quad SPI Flash
  • IDH05G120C5 |
    CoolSiC™ Schottky Diodes
  • IPD60R145CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • S25FL128SDPMFV000 |
    Quad SPI Flash
  • IPL65R195C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • S25FL256SAGMFIG11 |
    Quad SPI Flash
  • IDL08G65C5 |
    CoolSiC™ Schottky Diodes
  • IKZA50N65SS5 |
    IGBT discretes
  • IPZA65R029CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • S25FL256SAGMFB003 |
    Quad SPI Flash
  • IDH05G120C5 |
    CoolSiC™ Schottky Diodes
  • IPD60R145CFD7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • S25FL128SDPMFV000 |
    Quad SPI Flash
  • IPL65R195C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • S25FL256SAGMFIG11 |
    Quad SPI Flash
  • IDL08G65C5 |
    CoolSiC™ Schottky Diodes

1
2
3

Supplier's Site Datasheet
Memory - FM25V10-GTR - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
FM25V10-GTR
Memory FM25V10-GTR
FRAM (Ferroelectric RAM) Memory IC 1Mbit SPI 40 MHz 8-SOIC

FRAM (Ferroelectric RAM) Memory IC 1Mbit SPI 40 MHz 8-SOIC

Buy Now Datasheet
- FM25V10-GTR - Rochester Electronics
Rochester Electronics
Newburyport, MA, United States
FM25V10-GTR
FM25V10-GTR
FM25V10 - F-RAM Memory Serial

FM25V10 - F-RAM Memory Serial

Supplier's Site Datasheet
Memory - 448-FM25V10-GTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Memory
448-FM25V10-GTR-ND
Memory 448-FM25V10-GTR-ND
FRAM (Ferroelectric RAM) Memory IC 1Mb (128K x 8) SPI 40MHz 8-SOIC

FRAM (Ferroelectric RAM) Memory IC 1Mb (128K x 8) SPI 40MHz 8-SOIC

Buy Now Datasheet
Memory - 448-FM25V10-GTRDKR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Memory
448-FM25V10-GTRDKR-ND
Memory 448-FM25V10-GTRDKR-ND
FRAM (Ferroelectric RAM) Memory IC 1Mb (128K x 8) SPI 40MHz 8-SOIC

FRAM (Ferroelectric RAM) Memory IC 1Mb (128K x 8) SPI 40MHz 8-SOIC

Buy Now Datasheet
Memory - 448-FM25V10-GTRCT-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Memory
448-FM25V10-GTRCT-ND
Memory 448-FM25V10-GTRCT-ND
FRAM (Ferroelectric RAM) Memory IC 1Mb (128K x 8) SPI 40MHz 8-SOIC

FRAM (Ferroelectric RAM) Memory IC 1Mb (128K x 8) SPI 40MHz 8-SOIC

Buy Now Datasheet
F-Ram, 1Mbit, Spi, Soic-8; Memory Size Cypress Infineon Technologies - 41AH7451 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
F-Ram, 1Mbit, Spi, Soic-8; Memory Size Cypress Infineon Technologies
41AH7451
F-Ram, 1Mbit, Spi, Soic-8; Memory Size Cypress Infineon Technologies 41AH7451
F-RAM, 1MBIT, SPI, SOIC-8; Memory Size:1MB; Memory Organisation:128K x 8bit; IC Interface Type:SPI; Clock Frequency:40MHz; Supply Voltage Min:2V; Supply Voltage Max:3.6V; Memory Case Style:SOIC; No. of Pins:8Pins; Product Range:- RoHS Compliant: Yes

F-RAM, 1MBIT, SPI, SOIC-8; Memory Size:1MB; Memory Organisation:128K x 8bit; IC Interface Type:SPI; Clock Frequency:40MHz; Supply Voltage Min:2V; Supply Voltage Max:3.6V; Memory Case Style:SOIC; No. of Pins:8Pins; Product Range:- RoHS Compliant: Yes

Supplier's Site Datasheet
F-Ram, 1Mbit, Spi, Soic-8; Memory Size Cypress Infineon Technologies - 49AC3738 - Newark, An Avnet Company
Newark, An Avnet Company
Chicago, IL, United States
F-Ram, 1Mbit, Spi, Soic-8; Memory Size Cypress Infineon Technologies
49AC3738
F-Ram, 1Mbit, Spi, Soic-8; Memory Size Cypress Infineon Technologies 49AC3738
F-RAM, 1MBIT, SPI, SOIC-8; Memory Size:1MB; Memory Organisation:128K x 8bit; IC Interface Type:SPI; Clock Frequency:40MHz; Supply Voltage Min:2V; Supply Voltage Max:3.6V; Memory Case Style:SOIC; No. of Pins:8Pins; Operating RoHS Compliant: Yes

F-RAM, 1MBIT, SPI, SOIC-8; Memory Size:1MB; Memory Organisation:128K x 8bit; IC Interface Type:SPI; Clock Frequency:40MHz; Supply Voltage Min:2V; Supply Voltage Max:3.6V; Memory Case Style:SOIC; No. of Pins:8Pins; Operating RoHS Compliant: Yes

Supplier's Site Datasheet
Memory - FM25V10-GTR - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
FM25V10-GTR
Memory FM25V10-GTR
IC FRAM 1MBIT SPI 40MHZ 8SOIC

IC FRAM 1MBIT SPI 40MHZ 8SOIC

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG Quarktwin Technology Ltd. Rochester Electronics DigiKey Newark, An Avnet Company Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number FM25V10-GTR FM25V10-GTR FM25V10-GTR 448-FM25V10-GTR-ND 41AH7451 FM25V10-GTR
Product Name F-RAM (Ferroelectric RAM) Memory Memory F-Ram, 1Mbit, Spi, Soic-8; Memory Size Cypress Infineon Technologies Memory
Memory Category FRAM FRAM; FRAM NVRAM; FRAM FRAM
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 1000 kbits 1000 kbits 1000 kbits 8000 kbits 1000 kbits
Package Type PG-DSO-8 SOIC; 8-SOIC (0.154\", 3.90mm Width) PG-DSO-8 SOIC; "8-SOIC (0.154"", 3.90mm Width)" SOIC
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