Infineon Technologies AG Memory CY14E101J2-SXIT

Description
NVSRAM (Non-Volatile SRAM) Memory IC 1Mb (128K x 8) I²C 3.4MHz 8-SOIC
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Description
NVSRAM (Non-Volatile SRAM) Memory IC 1Mb (128K x 8) I²C 3.4MHz 8-SOIC
Request a Quote
Datasheet
Datasheet Summary
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The CY14E101J2-SXIT is a 1-Mbit (128 K vó 8) non-volatile static random access memory (nvSRAM) integrated circuit that features a full real-time clock (RTC) and operates via a high-speed I¬=C interface. It is designed for applications requiring reliable data storage with infinite read and write cycles, utilizing QuantumTrap technology for non-volatile data retention. The device supports automatic STORE operations during power-down and RECALL operations upon power-up, ensuring data integrity. This memory operates within a voltage range of 4.5 V to 5.5 V and is housed in a 16-pin small outline integrated circuit (SOIC) package. It has low power consumption characteristics, with an average active current of 1 mA at 3.4 MHz and a standby current of 250 ¬µA. The RTC includes features such as a watchdog timer, programmable clock alarms, and a square wave output, making it suitable for time-sensitive applications. The device is also RoHS compliant, ensuring it meets environmental regulations.

Datasheet Summary
Powered by GS/AI

The CY14E101J2-SXIT is a 1-Mbit (128 K vó 8) non-volatile static random access memory (nvSRAM) integrated circuit that features a full real-time clock (RTC) and operates via a high-speed I¬=C interface. It is designed for applications requiring reliable data storage with infinite read and write cycles, utilizing QuantumTrap technology for non-volatile data retention. The device supports automatic STORE operations during power-down and RECALL operations upon power-up, ensuring data integrity. This memory operates within a voltage range of 4.5 V to 5.5 V and is housed in a 16-pin small outline integrated circuit (SOIC) package. It has low power consumption characteristics, with an average active current of 1 mA at 3.4 MHz and a standby current of 250 ¬µA. The RTC includes features such as a watchdog timer, programmable clock alarms, and a square wave output, making it suitable for time-sensitive applications. The device is also RoHS compliant, ensuring it meets environmental regulations.

Suppliers

Company
Product
Description
Supplier Links
Memory - 448-CY14E101J2-SXITTR-ND - DigiKey
Thief River Falls, MN, United States
NVSRAM (Non-Volatile SRAM) Memory IC 1Mb (128K x 8) I²C 3.4MHz 8-SOIC

NVSRAM (Non-Volatile SRAM) Memory IC 1Mb (128K x 8) I²C 3.4MHz 8-SOIC

Buy Now Datasheet
Non Volatile Srams / Reel Cypress Infineon Technologies - 69W1609 - Newark, An Avnet Company
Chicago, IL, United States
Non Volatile Srams / Reel Cypress Infineon Technologies
69W1609
Non Volatile Srams / Reel Cypress Infineon Technologies 69W1609
Non Volatile SRAMs / REEL

Non Volatile SRAMs / REEL

Supplier's Site
Memory - CY14E101J2-SXIT - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
NVSRAM (Non-Volatile SRAM) Memory IC 1Mbit I²C 3.4 MHz 8-SOIC

NVSRAM (Non-Volatile SRAM) Memory IC 1Mbit I²C 3.4 MHz 8-SOIC

Buy Now Datasheet
IC NVSRAM 1MBIT I2C 3.4MHZ 8SOIC

IC NVSRAM 1MBIT I2C 3.4MHZ 8SOIC

Supplier's Site Datasheet

Technical Specifications

  DigiKey Newark, An Avnet Company Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 448-CY14E101J2-SXITTR-ND 69W1609 CY14E101J2-SXIT CY14E101J2-SXIT
Product Name Memory Non Volatile Srams / Reel Cypress Infineon Technologies Memory Memory
Memory Category NVRAM; NVSRAM SRAM Chip NVSRAM; NVSRAM; SRAM Chip NVSRAM; SRAM Chip
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