Infineon Technologies AG Memory CY14B104NA-BA25IT

Description
IC NVSRAM 4MBIT PARALLEL 48FBGA
Datasheet
Description
IC NVSRAM 4MBIT PARALLEL 48FBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC NVSRAM 4MBIT PARALLEL 48FBGA

IC NVSRAM 4MBIT PARALLEL 48FBGA

Supplier's Site Datasheet
Memory - CY14B104NA-BA25IT - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
NVSRAM (Non-Volatile SRAM) Memory IC 4Mbit Parallel 25 ns 48-FBGA (6x10)

NVSRAM (Non-Volatile SRAM) Memory IC 4Mbit Parallel 25 ns 48-FBGA (6x10)

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number CY14B104NA-BA25IT CY14B104NA-BA25IT
Product Name Memory Memory
Memory Category NVSRAM; SRAM Chip NVSRAM; NVSRAM; SRAM Chip
Access Time 25 ns 25 ns
Density 4000 kbits 4000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 00002331896 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
Memory - 71V016SA10BFG - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 10 ns
Density 1000 kbits
View Details
Flash Memory - 1882540 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details
Memory - MT4C4001J - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details