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Infineon Technologies AG Discrete Semiconductor Products - Transistors - IGBTs BSM50GD120DN2BOSA1

Description
IGBT MOD 1200V 72A 350W
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Suppliers

Company
Product
Description
Supplier Links
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
BSM50GD120DN2BOSA1
Discrete Semiconductor Products - Transistors - IGBTs BSM50GD120DN2BOSA1
IGBT MOD 1200V 72A 350W

IGBT MOD 1200V 72A 350W

Supplier's Site
Igbt Module, 1200V, Econopack3; Continuous Collector Current Infineon - 61M5056 - Newark, An Avnet Company
Chicago, IL, United States
Igbt Module, 1200V, Econopack3; Continuous Collector Current Infineon
61M5056
Igbt Module, 1200V, Econopack3; Continuous Collector Current Infineon 61M5056
IGBT MODULE, 1200V, ECONOPACK3; Continuous Collector Current:72A; Collector Emitter Saturation Voltage:3V; Power Dissipation:350W; Operating Temperature Max:125°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes

IGBT MODULE, 1200V, ECONOPACK3; Continuous Collector Current:72A; Collector Emitter Saturation Voltage:3V; Power Dissipation:350W; Operating Temperature Max:125°C; IGBT Termination:Stud; Collector Emitter Voltage Max:1.2kV RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number BSM50GD120DN2BOSA1 61M5056
Product Name Discrete Semiconductor Products - Transistors - IGBTs Igbt Module, 1200V, Econopack3; Continuous Collector Current Infineon
Packing Method Tray
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