- Trained on our vast library of engineering resources.

Infineon Technologies AG Small Signal/Small Power MOSFET BSL207SP

Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Small Signal/Small Power MOSFET - BSL207SP - Infineon Technologies AG
Neubiberg, Germany
Small Signal/Small Power MOSFET
BSL207SP
Small Signal/Small Power MOSFET BSL207SP
P-channel enhancement mode Field-Effect Transistor (FET), -20 V, TSOP-6 Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting, ADAS, body control units, SMPS and motor control. Summary of Features Enhancement mode Super logic level Avalanche rated Fast switching Dv/dt rated Pb-free lead-plating RoHS compliant, halogen-free Qualified according to automotive standards PPAP capable Benefits Low RDS(on) provides higher efficiency and extends battery life Small packages save PCB space Best-in-class quality and reliability Potential Applications Automotive Lighting Battery management Load switch DC-DC eMobility Motor control Telecom Onboard charger

P-channel enhancement mode Field-Effect Transistor (FET), -20 V, TSOP-6

Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting, ADAS, body control units, SMPS and motor control.


Summary of Features

  • Enhancement mode
  • Super logic level
  • Avalanche rated
  • Fast switching
  • Dv/dt rated
  • Pb-free lead-plating
  • RoHS compliant, halogen-free
  • Qualified according to automotive standards
  • PPAP capable

Benefits

  • Low RDS(on) provides higher efficiency and extends battery life
  • Small packages save PCB space
  • Best-in-class quality and reliability

Potential Applications

  • Automotive
  • Lighting
  • Battery management
  • Load switch
  • DC-DC
  • eMobility
  • Motor control
  • Telecom
  • Onboard charger
Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSL207SP - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BSL207SP
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BSL207SP
MOSFET P-CH 20V 6A TSOP-6

MOSFET P-CH 20V 6A TSOP-6

Supplier's Site
Single FETs, MOSFETs - BSL207SPINTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSL207SPINTR-ND
Single FETs, MOSFETs BSL207SPINTR-ND
P-Channel 20V 6A (Ta) 2W (Ta) Surface Mount PG-TSOP6-6

P-Channel 20V 6A (Ta) 2W (Ta) Surface Mount PG-TSOP6-6

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSL207SP - 1154741-BSL207SP - Win Source Electronics
Yishun, Singapore
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSL207SP
1154741-BSL207SP
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSL207SP 1154741-BSL207SP
Manufacturer: Infineon Technologies Win Source Part Number: 1154741-BSL207SP Manufacturer Homepage: www.infineon.com RoHS State: Request Verification Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1154741-BSL207SP
Manufacturer Homepage: www.infineon.com
RoHS State: Request Verification
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance

Supplier's Site
 - 7532781P - RS Components, Ltd.
Corby, Northants, United Kingdom
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility. Enhancement mode. Avalanche rated. Low switching and conduction power losses. Pb-free lead plating, RoHS compliant. Standard packages. OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C Channel Type = P Maximum Continuous Drain Current = 6 A Maximum Drain Source Voltage = 20 V Maximum Drain Source Resistance = 65 mOhms Maximum Gate Threshold Voltage = 1.2V Minimum Gate Threshold Voltage = 0.6V Maximum Gate Source Voltage = -12 V, +12 V Package Type = TSOP Mounting Type = Surface Mount Transistor Configuration = Single Delivery on production packaging - Reel. This product is non-returnable.

The Infineon OptiMOSâ„¢ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode. Avalanche rated. Low switching and conduction power losses. Pb-free lead plating, RoHS compliant. Standard packages. OptiMOSâ„¢ P-Channel Series: Temperature range from -55°C to +175°C
Channel Type = P
Maximum Continuous Drain Current = 6 A
Maximum Drain Source Voltage = 20 V
Maximum Drain Source Resistance = 65 mOhms
Maximum Gate Threshold Voltage = 1.2V
Minimum Gate Threshold Voltage = 0.6V
Maximum Gate Source Voltage = -12 V, +12 V
Package Type = TSOP
Mounting Type = Surface Mount
Transistor Configuration = Single
Delivery on production packaging - Reel. This product is non-returnable.

Supplier's Site
 - 7532781 - RS Components, Ltd.
Corby, Northants, United Kingdom
The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility. Enhancement mode. Avalanche rated. Low switching and conduction power losses. Pb-free lead plating, RoHS compliant. Standard packages. OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C Channel Type = P Maximum Continuous Drain Current = 6 A Maximum Drain Source Voltage = 20 V Maximum Drain Source Resistance = 65 mOhms Maximum Gate Threshold Voltage = 1.2V Minimum Gate Threshold Voltage = 0.6V Maximum Gate Source Voltage = -12 V, +12 V Package Type = TSOP Mounting Type = Surface Mount Transistor Configuration = Single

The Infineon OptiMOSâ„¢ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.
Enhancement mode. Avalanche rated. Low switching and conduction power losses. Pb-free lead plating, RoHS compliant. Standard packages. OptiMOSâ„¢ P-Channel Series: Temperature range from -55°C to +175°C
Channel Type = P
Maximum Continuous Drain Current = 6 A
Maximum Drain Source Voltage = 20 V
Maximum Drain Source Resistance = 65 mOhms
Maximum Gate Threshold Voltage = 1.2V
Minimum Gate Threshold Voltage = 0.6V
Maximum Gate Source Voltage = -12 V, +12 V
Package Type = TSOP
Mounting Type = Surface Mount
Transistor Configuration = Single

Supplier's Site

Technical Specifications

  Infineon Technologies AG Shenzhen Shengyu Electronics Technology Limited DigiKey Win Source Electronics RS Components, Ltd.
Product Category Power MOSFET RF Transistors Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSL207SP BSL207SP BSL207SPINTR-ND 1154741-BSL207SP 7532781P
Product Name Small Signal/Small Power MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSL207SP
Polarity P-Channel; P P-Channel P-Channel
Transistor Technology / Material Si/SiC
Operating Mode Enhancement
TJ 150 C (302 F)
Unlock Full Specs
to access all available technical data

Similar Products

Small Signal/Small Power MOSFET - BSP322P - Infineon Technologies AG
Specs
Polarity P-Channel; P
Transistor Technology / Material Si/SiC
Operating Mode Enhancement
View Details
2 suppliers
Small Signal/Small Power MOSFET - BSS138I - Infineon Technologies AG
Specs
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 3.5 ohms
View Details
N-Channel Power MOSFET - BSC035N10NS5 - Infineon Technologies AG
Specs
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0035 ohms
View Details
2 suppliers
RF - High Reliability Discrete - HiRel Radiation Hard PowerMOS Transistor - CHIP L5452B(P) - CHIP L5452B(P) - Infineon Technologies AG
Specs
Package Type Die
Packing Method Tray; VACUUM RELEASED TRAY
View Details