- Trained on our vast library of engineering resources.

Infineon Technologies AG Small Signal/Small Power MOSFET BSD840N

Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Small Signal/Small Power MOSFET - BSD840N - Infineon Technologies AG
Neubiberg, Germany
Small Signal/Small Power MOSFET
BSD840N
Small Signal/Small Power MOSFET BSD840N
Dual N-Channel Small Signal 20 V MOSFET in SOT363 package Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting, ADAS, body control units, SMPS and motor control. Summary of Features Enhancement mode Ultra logic level Avalanche rated Fast switching Dv/dt rated Pb-free lead-plating RoHS compliant, halogen-free Qualified according to automotive standards PPAP capable Benefits Low RDS(on) provides higher efficiency and extends battery life Small packages save PCB space Best-in-class quality and reliability Potential Applications Automotive Lighting Battery management Load switch DC-DC eMobility Motor control Telecom Onboard charger Designers who used this product also designed with BTS5045-1EJA | PROFET™ + 12V | Automotive Smart High-Side Switch BTS5200-4EKA | PROFET™ + 12V | Automotive Smart High-Side Switch IPD90N06S4-07 | Automotive MOSFET IPD90P04P4L-04 | Automotive MOSFET IRF7842 | N-Channel Power MOSFET ESD24VS2U | Multi purpose diodes for ESD protection AUIRF7749L2 | Automotive MOSFET BAS52-02V | Schottky Diodes AUIRF8739L2 | Automotive MOSFET BGA7L1BN6 | Multi-purpose LNAs IPD50P04P4L-11 | Automotive MOSFET IPBE65R115CFD7A | Automotive MOSFET TLE4250-2G | Linear Voltage Regulators for Automotive Applications | OPTIREG™ linear IPD65R660CFDA | Automotive MOSFET ESD200-B1-CSP0201 | Multi purpose diodes for ESD protection ESD102-U1-02ELS | Low capacitance diodes for ESD protection TLE4253E | Linear Voltage Regulators for Automotive Applications | OPTIREG™ linear TLE4264G | Linear Voltage Regulators for Automotive Applications | OPTIREG™ linear BTS4140N | Classic PROFET™ 24V | Automotive Smart High-Side Switch BTS5008-1EKB | PROFET™ + 12V | Automotive Smart High-Side Switch BTS5045-1EJA | PROFET™ + 12V | Automotive Smart High-Side Switch BTS5200-4EKA | PROFET™ + 12V | Automotive Smart High-Side Switch IPD90N06S4-07 | Automotive MOSFET IPD90P04P4L-04 | Automotive MOSFET IRF7842 | N-Channel Power MOSFET ESD24VS2U | Multi purpose diodes for ESD protection AUIRF7749L2 | Automotive MOSFET BAS52-02V | Schottky Diodes 1 2 3 4 5

Dual N-Channel Small Signal 20 V MOSFET in SOT363 package

Infineon technologies offers automotive and industrial manufacturers a broad portfolio of N and P-Channel Small Signal MOSFETs that meet and exceed the highest quality requirements in well-known industry standard packages. With unmatched levels of reliability and manufacturing capacity these components are ideally suited for a wide variety of applications including LED lighting, ADAS, body control units, SMPS and motor control.


Summary of Features

  • Enhancement mode
  • Ultra logic level
  • Avalanche rated
  • Fast switching
  • Dv/dt rated
  • Pb-free lead-plating
  • RoHS compliant, halogen-free
  • Qualified according to automotive standards
  • PPAP capable

Benefits

  • Low RDS(on) provides higher efficiency and extends battery life
  • Small packages save PCB space
  • Best-in-class quality and reliability

Potential Applications

  • Automotive
  • Lighting
  • Battery management
  • Load switch
  • DC-DC
  • eMobility
  • Motor control
  • Telecom
  • Onboard charger

Designers who used this product also designed with


  • BTS5045-1EJA |
    PROFET™ + 12V | Automotive Smart High-Side Switch
  • BTS5200-4EKA |
    PROFET™ + 12V | Automotive Smart High-Side Switch
  • IPD90N06S4-07 |
    Automotive MOSFET
  • IPD90P04P4L-04 |
    Automotive MOSFET
  • IRF7842 |
    N-Channel Power MOSFET
  • ESD24VS2U |
    Multi purpose diodes for ESD protection
  • AUIRF7749L2 |
    Automotive MOSFET
  • BAS52-02V |
    Schottky Diodes
  • AUIRF8739L2 |
    Automotive MOSFET
  • BGA7L1BN6 |
    Multi-purpose LNAs
  • IPD50P04P4L-11 |
    Automotive MOSFET
  • IPBE65R115CFD7A |
    Automotive MOSFET
  • TLE4250-2G |
    Linear Voltage Regulators for Automotive Applications | OPTIREG™ linear
  • IPD65R660CFDA |
    Automotive MOSFET
  • ESD200-B1-CSP0201 |
    Multi purpose diodes for ESD protection
  • ESD102-U1-02ELS |
    Low capacitance diodes for ESD protection
  • TLE4253E |
    Linear Voltage Regulators for Automotive Applications | OPTIREG™ linear
  • TLE4264G |
    Linear Voltage Regulators for Automotive Applications | OPTIREG™ linear
  • BTS4140N |
    Classic PROFET™ 24V | Automotive Smart High-Side Switch
  • BTS5008-1EKB |
    PROFET™ + 12V | Automotive Smart High-Side Switch
  • BTS5045-1EJA |
    PROFET™ + 12V | Automotive Smart High-Side Switch
  • BTS5200-4EKA |
    PROFET™ + 12V | Automotive Smart High-Side Switch
  • IPD90N06S4-07 |
    Automotive MOSFET
  • IPD90P04P4L-04 |
    Automotive MOSFET
  • IRF7842 |
    N-Channel Power MOSFET
  • ESD24VS2U |
    Multi purpose diodes for ESD protection
  • AUIRF7749L2 |
    Automotive MOSFET
  • BAS52-02V |
    Schottky Diodes

1
2
3
4
5

Supplier's Site Datasheet
 - 8235493 - RS Components, Ltd.
Corby, Northants, United Kingdom
Infineon’s OptiMOS™2 N-Channel family offers the industrys lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types. Channel Type = N Maximum Continuous Drain Current = 880 mA Maximum Drain Source Voltage = 20 V Maximum Drain Source Resistance = 560 mOhms Maximum Gate Threshold Voltage = 0.75V Minimum Gate Threshold Voltage = 0.3V Maximum Gate Source Voltage = -8 V, +8 V Package Type = SOT-363 (SC-88) Mounting Type = Surface Mount Pin Count = 6

Infineon’s OptiMOS™2 N-Channel family offers the industrys lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
Channel Type = N
Maximum Continuous Drain Current = 880 mA
Maximum Drain Source Voltage = 20 V
Maximum Drain Source Resistance = 560 mOhms
Maximum Gate Threshold Voltage = 0.75V
Minimum Gate Threshold Voltage = 0.3V
Maximum Gate Source Voltage = -8 V, +8 V
Package Type = SOT-363 (SC-88)
Mounting Type = Surface Mount
Pin Count = 6

Supplier's Site
 - 8235493P - RS Components, Ltd.
Corby, Northants, United Kingdom
Infineon’s OptiMOS™2 N-Channel family offers the industrys lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types. Channel Type = N Maximum Continuous Drain Current = 880 mA Maximum Drain Source Voltage = 20 V Maximum Drain Source Resistance = 560 mOhms Maximum Gate Threshold Voltage = 0.75V Minimum Gate Threshold Voltage = 0.3V Maximum Gate Source Voltage = -8 V, +8 V Package Type = SOT-363 (SC-88) Mounting Type = Surface Mount Pin Count = 6 Delivery on production packaging - Reel. This product is non-returnable.

Infineon’s OptiMOS™2 N-Channel family offers the industrys lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
Channel Type = N
Maximum Continuous Drain Current = 880 mA
Maximum Drain Source Voltage = 20 V
Maximum Drain Source Resistance = 560 mOhms
Maximum Gate Threshold Voltage = 0.75V
Minimum Gate Threshold Voltage = 0.3V
Maximum Gate Source Voltage = -8 V, +8 V
Package Type = SOT-363 (SC-88)
Mounting Type = Surface Mount
Pin Count = 6
Delivery on production packaging - Reel. This product is non-returnable.

Supplier's Site
 - 1458818 - RS Components, Ltd.
Corby, Northants, United Kingdom
Infineon’s OptiMOS™2 N-Channel family offers the industrys lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types. Channel Type = N Maximum Continuous Drain Current = 880 mA Maximum Drain Source Voltage = 20 V Maximum Drain Source Resistance = 560 mOhms Maximum Gate Threshold Voltage = 0.75V Minimum Gate Threshold Voltage = 0.3V Maximum Gate Source Voltage = -8 V, +8 V Package Type = SOT-363 (SC-88) Mounting Type = Surface Mount Transistor Configuration = Isolated

Infineon’s OptiMOS™2 N-Channel family offers the industrys lowest on-state resistance inside their voltage group. The Power MOSFET series can be used in many applications including high frequency Telecom, Datacom, solar, low voltage drives and Server Power Supplies. The OptiMOS 2 product family ranges from 20V and over and offers a selection of different package types.
Channel Type = N
Maximum Continuous Drain Current = 880 mA
Maximum Drain Source Voltage = 20 V
Maximum Drain Source Resistance = 560 mOhms
Maximum Gate Threshold Voltage = 0.75V
Minimum Gate Threshold Voltage = 0.3V
Maximum Gate Source Voltage = -8 V, +8 V
Package Type = SOT-363 (SC-88)
Mounting Type = Surface Mount
Transistor Configuration = Isolated

Supplier's Site

Technical Specifications

  Infineon Technologies AG RS Components, Ltd.
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSD840N 8235493
Product Name Small Signal/Small Power MOSFET
Polarity N+N N-Channel
Transistor Technology / Material Si/SiC
rDS(on) 0.4000 ohms 0.5600 ohms
TJ -55 to 150 C (-67 to 302 F)
Unlock Full Specs
to access all available technical data

Similar Products

Dual MOSFET - BSL316C - Infineon Technologies AG
Infineon Technologies AG
Specs
Polarity N+P
Transistor Technology / Material Si/SiC
MOSFET Operating Mode Enhancement
View Details
N-Channel Power MOSFET - BSC009NE2LS5 - Infineon Technologies AG
Specs
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 9.00E-4 ohms
View Details
N-Channel Power MOSFET - BSC120N03MS-G - Infineon Technologies AG
Specs
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0120 ohms
View Details
Silicon Carbide MOSFET Discretes - IMBG120R030M1H - Infineon Technologies AG
Specs
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
TJ 175 C (347 F)
View Details