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Infineon Technologies AG N-Channel Power MOSFET BSC196N10NS-G

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N-Channel Power MOSFET - BSC196N10NS-G - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSC196N10NS-G
N-Channel Power MOSFET BSC196N10NS-G
Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). Summary of Features Excellent switching performance World’s lowest R DS(on) Very low Q g and Q gd Excellent gate charge x R DS(on) product (FOM) RoHS compliant-halogen free MSL1 rated 2 Benefits Environmentally friendly Increased efficiency Highest power density Less paralleling required Smallest board-space consumption Easy-to-design products Potential Applications Synchronous rectification for AC-DC SMPS Motor control for 48V–80V systems (i.e. domestic vehicles, power-tools, trucks) Isolated DC-DC converters (telecom and datacom systems Or-ing switches and circuit breakers in 48V systems Class D audio amplifiers Uninterruptable power supplies (UPS) Designers who used this product also designed with IDL08G65C5 | CoolSiC™ Schottky Diodes IRF7493 | N-Channel Power MOSFET IPL65R070C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IRF7832 | N-Channel Power MOSFET BSC026N08NS5 | N-Channel Power MOSFET ICE2QR2280G-1 | Quasi Resonant CoolSET™ IRS2127S | Gate Driver ICs BSC100N06LS3 G | N-Channel Power MOSFET ICE3PCS02G | PFC-CCM (continuous conduction mode) ICs IPP057N08N3 G | N-Channel Power MOSFET IDL08G65C5 | CoolSiC™ Schottky Diodes IRF7493 | N-Channel Power MOSFET IPL65R070C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IRF7832 | N-Channel Power MOSFET BSC026N08NS5 | N-Channel Power MOSFET ICE2QR2280G-1 | Quasi Resonant CoolSET™ IRS2127S | Gate Driver ICs BSC100N06LS3 G | N-Channel Power MOSFET 1 2 3

Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit).


Summary of Features

  • Excellent switching performance
  • World’s lowest R DS(on)
  • Very low Q g and Q gd
  • Excellent gate charge x R DS(on) product (FOM)
  • RoHS compliant-halogen free
  • MSL1 rated 2

Benefits

  • Environmentally friendly
  • Increased efficiency
  • Highest power density
  • Less paralleling required
  • Smallest board-space consumption
  • Easy-to-design products

Potential Applications

  • Synchronous rectification for AC-DC SMPS
  • Motor control for 48V–80V systems (i.e. domestic vehicles, power-tools, trucks)
  • Isolated DC-DC converters (telecom and datacom systems
  • Or-ing switches and circuit breakers in 48V systems
  • Class D audio amplifiers
  • Uninterruptable power supplies (UPS)

Designers who used this product also designed with


  • IDL08G65C5 |
    CoolSiC™ Schottky Diodes
  • IRF7493 |
    N-Channel Power MOSFET
  • IPL65R070C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IRF7832 |
    N-Channel Power MOSFET
  • BSC026N08NS5 |
    N-Channel Power MOSFET
  • ICE2QR2280G-1 |
    Quasi Resonant CoolSET™
  • IRS2127S |
    Gate Driver ICs
  • BSC100N06LS3 G |
    N-Channel Power MOSFET
  • ICE3PCS02G |
    PFC-CCM (continuous conduction mode) ICs
  • IPP057N08N3 G |
    N-Channel Power MOSFET
  • IDL08G65C5 |
    CoolSiC™ Schottky Diodes
  • IRF7493 |
    N-Channel Power MOSFET
  • IPL65R070C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IRF7832 |
    N-Channel Power MOSFET
  • BSC026N08NS5 |
    N-Channel Power MOSFET
  • ICE2QR2280G-1 |
    Quasi Resonant CoolSET™
  • IRS2127S |
    Gate Driver ICs
  • BSC100N06LS3 G |
    N-Channel Power MOSFET

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number BSC196N10NS-G
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0196 ohms
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