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Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC120N03LS G BSC120N03LS-G

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Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC120N03LS G - BSC120N03LS-G - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC120N03LS G
BSC120N03LS-G
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC120N03LS G BSC120N03LS-G
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6) Summary of Features Ultra low gate and output charge Lowest on-state resistance in small footprint packages Easy to design in Benefits Increased battery lifetime Improved EMI behavior making external snubber networks obsolete Saving costs Saving space Reducing power losses Potential Applications Onboard charger Notebook Mainboard DC-DC VRD/VRM Motor control LED Designers who used this product also designed with BTS452T | Classic PROFET™ 24V | Automotive Smart High-Side Switch IRLML6401 | P-Channel Power MOSFET BSZ160N10NS3 G | N-Channel Power MOSFET IRF640NS | N-Channel Power MOSFET IRLML2502 | N-Channel Power MOSFET BSC070N10NS3 G | N-Channel Power MOSFET BTS452T | Classic PROFET™ 24V | Automotive Smart High-Side Switch IRLML6401 | P-Channel Power MOSFET BSZ160N10NS3 G | N-Channel Power MOSFET IRF640NS | N-Channel Power MOSFET IRLML2502 | N-Channel Power MOSFET BSC070N10NS3 G | N-Channel Power MOSFET BTS452T | Classic PROFET™ 24V | Automotive Smart High-Side Switch IRLML6401 | P-Channel Power MOSFET 1 2

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)


Summary of Features

  • Ultra low gate and output charge
  • Lowest on-state resistance in small footprint packages
  • Easy to design in

Benefits

  • Increased battery lifetime
  • Improved EMI behavior making external snubber networks obsolete
  • Saving costs
  • Saving space
  • Reducing power losses

Potential Applications

  • Onboard charger
  • Notebook
  • Mainboard
  • DC-DC
  • VRD/VRM
  • Motor control
  • LED

Designers who used this product also designed with


  • BTS452T |
    Classic PROFET™ 24V | Automotive Smart High-Side Switch
  • IRLML6401 |
    P-Channel Power MOSFET
  • BSZ160N10NS3 G |
    N-Channel Power MOSFET
  • IRF640NS |
    N-Channel Power MOSFET
  • IRLML2502 |
    N-Channel Power MOSFET
  • BSC070N10NS3 G |
    N-Channel Power MOSFET
  • BTS452T |
    Classic PROFET™ 24V | Automotive Smart High-Side Switch
  • IRLML6401 |
    P-Channel Power MOSFET
  • BSZ160N10NS3 G |
    N-Channel Power MOSFET
  • IRF640NS |
    N-Channel Power MOSFET
  • IRLML2502 |
    N-Channel Power MOSFET
  • BSC070N10NS3 G |
    N-Channel Power MOSFET
  • BTS452T |
    Classic PROFET™ 24V | Automotive Smart High-Side Switch
  • IRLML6401 |
    P-Channel Power MOSFET

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number BSC120N03LS-G
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC120N03LS G
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0120 ohms
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