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Infineon Technologies AG N-Channel Power MOSFET BSC117N08NS5

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N-Channel Power MOSFET - BSC117N08NS5 - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSC117N08NS5
N-Channel Power MOSFET BSC117N08NS5
OptiMOS™ 5 power MOSFET 80V for telecom applications OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%. Summary of Features Optimized for synchronous rectification Ideal for high switching frequency Output capacitance reduction of up to 44 % RDS(on) reduction of up to 43 % from previous generation Benefits Highest system efficiency Reduced switching and conduction losses Less paralleling required Increased power density Low voltage overshoot Potential Applications Telecom Server Solar Low voltage drives Adapter Applications Consumer electronics Fuel-Cell Control Unit Servo motor drive and control Space applications Designers who used this product also designed with IAUC90N10S5N062 | Automotive MOSFET IPT020N10N5 | N-Channel Power MOSFET BSC074N15NS5 | N-Channel Power MOSFET IAUZ40N10S5N130 | Automotive MOSFET BTT6010-1ERB | PROFET™ + 24V | Automotive Smart High-Side Switch IR4301M | Integrated Class D Audio Amplifier ICs IPB020N10N5LF | N-Channel Power MOSFET 1ED44173N01B | Gate Driver ICs 1EDN7550B | Gate Driver ICs 6ED2742S01Q | Gate Driver ICs IRS21271S | Gate Driver ICs 1EDI60N12AF | Gate Driver ICs 2EDL8033G4B | Gate Driver ICs 2EDN7534B | Gate Driver ICs IRS10752L | Gate Driver ICs IRS4427S | Gate Driver ICs IRS2007S | Gate Driver ICs IPD135N08N3 G | N-Channel Power MOSFET IRF7842 | N-Channel Power MOSFET IPB110N20N3LF | N-Channel Power MOSFET IAUC90N10S5N062 | Automotive MOSFET IPT020N10N5 | N-Channel Power MOSFET BSC074N15NS5 | N-Channel Power MOSFET IAUZ40N10S5N130 | Automotive MOSFET BTT6010-1ERB | PROFET™ + 24V | Automotive Smart High-Side Switch IR4301M | Integrated Class D Audio Amplifier ICs IPB020N10N5LF | N-Channel Power MOSFET 1ED44173N01B | Gate Driver ICs 1 2 3 4 5

OptiMOS™ 5 power MOSFET 80V for telecom applications

OptiMOS™ 5 80 V power MOSFET, especially designed for Synchronous Rectification for telecom and server power supplies. In addition, the device can also be utilized in other industrial applications such as solar, low voltage drives and adapter. Within seven different packages, the OptiMOS™ 5 80 V MOSFETs offer the industry’s lowest RDS(on). Additionally, compared to the previous generation, OptiMOS™ 5 80 V has an RDS(on) reduction of up to 43%.


Summary of Features

  • Optimized for synchronous rectification
  • Ideal for high switching frequency
  • Output capacitance reduction of up to 44 %
  • RDS(on) reduction of up to 43 % from previous generation

Benefits

  • Highest system efficiency
  • Reduced switching and conduction losses
  • Less paralleling required
  • Increased power density
  • Low voltage overshoot

Potential Applications

  • Telecom
  • Server
  • Solar
  • Low voltage drives
  • Adapter

Applications

  • Consumer electronics
  • Fuel-Cell Control Unit
  • Servo motor drive and control
  • Space applications

Designers who used this product also designed with


  • IAUC90N10S5N062 |
    Automotive MOSFET
  • IPT020N10N5 |
    N-Channel Power MOSFET
  • BSC074N15NS5 |
    N-Channel Power MOSFET
  • IAUZ40N10S5N130 |
    Automotive MOSFET
  • BTT6010-1ERB |
    PROFET™ + 24V | Automotive Smart High-Side Switch
  • IR4301M |
    Integrated Class D Audio Amplifier ICs
  • IPB020N10N5LF |
    N-Channel Power MOSFET
  • 1ED44173N01B |
    Gate Driver ICs
  • 1EDN7550B |
    Gate Driver ICs
  • 6ED2742S01Q |
    Gate Driver ICs
  • IRS21271S |
    Gate Driver ICs
  • 1EDI60N12AF |
    Gate Driver ICs
  • 2EDL8033G4B |
    Gate Driver ICs
  • 2EDN7534B |
    Gate Driver ICs
  • IRS10752L |
    Gate Driver ICs
  • IRS4427S |
    Gate Driver ICs
  • IRS2007S |
    Gate Driver ICs
  • IPD135N08N3 G |
    N-Channel Power MOSFET
  • IRF7842 |
    N-Channel Power MOSFET
  • IPB110N20N3LF |
    N-Channel Power MOSFET
  • IAUC90N10S5N062 |
    Automotive MOSFET
  • IPT020N10N5 |
    N-Channel Power MOSFET
  • BSC074N15NS5 |
    N-Channel Power MOSFET
  • IAUZ40N10S5N130 |
    Automotive MOSFET
  • BTT6010-1ERB |
    PROFET™ + 24V | Automotive Smart High-Side Switch
  • IR4301M |
    Integrated Class D Audio Amplifier ICs
  • IPB020N10N5LF |
    N-Channel Power MOSFET
  • 1ED44173N01B |
    Gate Driver ICs

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Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC117N08NS5 - 1154703-BSC117N08NS5 - Win Source Electronics
Yishun, Singapore
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC117N08NS5
1154703-BSC117N08NS5
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC117N08NS5 1154703-BSC117N08NS5
Manufacturer: Infineon Technologies Win Source Part Number: 1154703-BSC117N08NS5 Family Name: BSC117N08NS5 Manufacturer Homepage: www.infineon.com Alternative Parts (Cross-Reference): FDMS86320; FDMS86380_F085; STL75N8LF6; Introduction Date: December 17, 2014 ECCN: EAR99 Estimated EOL Date: 2029 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1154703-BSC117N08NS5
Family Name: BSC117N08NS5
Manufacturer Homepage: www.infineon.com
Alternative Parts (Cross-Reference): FDMS86320; FDMS86380_F085; STL75N8LF6;
Introduction Date: December 17, 2014
ECCN: EAR99
Estimated EOL Date: 2029
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

Supplier's Site

Technical Specifications

  Infineon Technologies AG Win Source Electronics
Product Category Power MOSFET Transistors
Product Number BSC117N08NS5 1154703-BSC117N08NS5
Product Name N-Channel Power MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC117N08NS5
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0117 ohms
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