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Infineon Technologies AG N-Channel Power MOSFET BSC0925ND

Description
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6) Summary of Features Ultra low gate and output charge Lowest on-state resistance in small footprint packages Easy to design in Benefits Increased battery lifetime Improved EMI behavior making external snubber networks obsolete Saving costs Saving space Reducing power losses Potential Applications Onboard charger Notebook Mainboard DC-DC VRD/VRM Motor control LED Applications Trusted semiconductor solutions for light electric vehicles (LEV) Designers who used this product also designed with BAT54-04W | Schottky Diodes BSZ034N04LS | N-Channel Power MOSFET BSS138N | Small signal/small power MOSFET WLC1115-68LQXQT | Wireless Charging ICs 1EDN7550B | Gate Driver ICs 2EDN7534B | Gate Driver ICs 6ED2742S01Q | Gate Driver ICs IRS10752L | Gate Driver ICs 1ED44173N01B | Gate Driver ICs 1EDI60N12AF | Gate Driver ICs IRS21271S | Gate Driver ICs IRS4427S | Gate Driver ICs BAT54-04W | Schottky Diodes BSZ034N04LS | N-Channel Power MOSFET BSS138N | Small signal/small power MOSFET WLC1115-68LQXQT | Wireless Charging ICs 1EDN7550B | Gate Driver ICs 2EDN7534B | Gate Driver ICs 6ED2742S01Q | Gate Driver ICs IRS10752L | Gate Driver ICs 1 2 3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - BSC0925ND - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSC0925ND
N-Channel Power MOSFET BSC0925ND
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6) Summary of Features Ultra low gate and output charge Lowest on-state resistance in small footprint packages Easy to design in Benefits Increased battery lifetime Improved EMI behavior making external snubber networks obsolete Saving costs Saving space Reducing power losses Potential Applications Onboard charger Notebook Mainboard DC-DC VRD/VRM Motor control LED Applications Trusted semiconductor solutions for light electric vehicles (LEV) Designers who used this product also designed with BAT54-04W | Schottky Diodes BSZ034N04LS | N-Channel Power MOSFET BSS138N | Small signal/small power MOSFET WLC1115-68LQXQT | Wireless Charging ICs 1EDN7550B | Gate Driver ICs 2EDN7534B | Gate Driver ICs 6ED2742S01Q | Gate Driver ICs IRS10752L | Gate Driver ICs 1ED44173N01B | Gate Driver ICs 1EDI60N12AF | Gate Driver ICs IRS21271S | Gate Driver ICs IRS4427S | Gate Driver ICs BAT54-04W | Schottky Diodes BSZ034N04LS | N-Channel Power MOSFET BSS138N | Small signal/small power MOSFET WLC1115-68LQXQT | Wireless Charging ICs 1EDN7550B | Gate Driver ICs 2EDN7534B | Gate Driver ICs 6ED2742S01Q | Gate Driver ICs IRS10752L | Gate Driver ICs 1 2 3

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)


Summary of Features

  • Ultra low gate and output charge
  • Lowest on-state resistance in small footprint packages
  • Easy to design in

Benefits

  • Increased battery lifetime
  • Improved EMI behavior making external snubber networks obsolete
  • Saving costs
  • Saving space
  • Reducing power losses

Potential Applications

  • Onboard charger
  • Notebook
  • Mainboard
  • DC-DC
  • VRD/VRM
  • Motor control
  • LED

Applications

  • Trusted semiconductor solutions for light electric vehicles (LEV)

Designers who used this product also designed with


  • BAT54-04W |
    Schottky Diodes
  • BSZ034N04LS |
    N-Channel Power MOSFET
  • BSS138N |
    Small signal/small power MOSFET
  • WLC1115-68LQXQT |
    Wireless Charging ICs
  • 1EDN7550B |
    Gate Driver ICs
  • 2EDN7534B |
    Gate Driver ICs
  • 6ED2742S01Q |
    Gate Driver ICs
  • IRS10752L |
    Gate Driver ICs
  • 1ED44173N01B |
    Gate Driver ICs
  • 1EDI60N12AF |
    Gate Driver ICs
  • IRS21271S |
    Gate Driver ICs
  • IRS4427S |
    Gate Driver ICs
  • BAT54-04W |
    Schottky Diodes
  • BSZ034N04LS |
    N-Channel Power MOSFET
  • BSS138N |
    Small signal/small power MOSFET
  • WLC1115-68LQXQT |
    Wireless Charging ICs
  • 1EDN7550B |
    Gate Driver ICs
  • 2EDN7534B |
    Gate Driver ICs
  • 6ED2742S01Q |
    Gate Driver ICs
  • IRS10752L |
    Gate Driver ICs

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Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET N-Ch 30V 40A TISON-8

MOSFET N-Ch 30V 40A TISON-8

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0925ND - 1154697-BSC0925ND - Win Source Electronics
Yishun, Singapore
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0925ND
1154697-BSC0925ND
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0925ND 1154697-BSC0925ND
Manufacturer: Infineon Technologies Win Source Part Number: 1154697-BSC0925ND Manufacturer Homepage: www.infineon.com Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1154697-BSC0925ND
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance

Supplier's Site

Technical Specifications

  Infineon Technologies AG VAST STOCK CO., LIMITED Win Source Electronics
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSC0925ND BSC0925ND 1154697-BSC0925ND
Product Name N-Channel Power MOSFET MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC0925ND
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0045 ohms
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