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Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs BSC091N03MSCGATMA1

Description
POWER FIELD-EFFECT TRANSISTOR, 1
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Product
Description
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Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BSC091N03MSCGATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BSC091N03MSCGATMA1
POWER FIELD-EFFECT TRANSISTOR, 1

POWER FIELD-EFFECT TRANSISTOR, 1

Supplier's Site
 - BSC091N03MSCGATMA1 - Rochester Electronics
Newburyport, MA, United States
BSC091N03 - Power Field-Effect Transistor, 12A, 30V, 0.0091ohm, N-Channel, MOSFET

BSC091N03 - Power Field-Effect Transistor, 12A, 30V, 0.0091ohm, N-Channel, MOSFET

Supplier's Site Datasheet

Technical Specifications

  Acme Chip Technology Co., Limited Rochester Electronics
Product Category RF Transistors Power MOSFET
Product Number BSC091N03MSCGATMA1 BSC091N03MSCGATMA1
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type 8-PowerTDFN DFN8
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