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Infineon Technologies AG N-Channel Power MOSFET BSC074N15NS5

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N-Channel Power MOSFET - BSC074N15NS5 - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSC074N15NS5
N-Channel Power MOSFET BSC074N15NS5
OptiMOS™ power MOSFETs in SuperSO8 package Infineon's OptiMOS™ MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. Low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort. Key features Lowest RDS(on) enables highest power density and efficiency Higher operating temperature rating to 175°C for increased reliability Low RthJC for excellent thermal behavior Lower reverse recovery charge (Qrr) Key benefits Lower full load temperature Less paralleling Reduced overshoot Increased system power density Smaller size System cost reduction Engineering costs and effort reduction Target applications Server Telecom Power tools Low voltage drives Class D audio applications Applications 48 V power distribution DIN rail power supplies General purpose motor drive - variating frequency and voltage Solutions for inductive wireless charging above 50 W Telecommunication infrastructure Designers who used this product also designed with BSC040N10NS5 | N-Channel Power MOSFET 1EDB8275F | Gate Driver ICs IRS20752L | Gate Driver ICs IRS21271S | Gate Driver ICs XDPP1100-Q040 | Digital Power Controllers IPN95R3K7P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPB072N15N3 G | N-Channel Power MOSFET 1EDN7511B | Gate Driver ICs IPL60R285P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC098N10NS5 | N-Channel Power MOSFET 2EDS8165H | Gate Driver ICs IPDD60R050G7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSC430N25NSFD | N-Channel Power MOSFET BSC012N06NS | N-Channel Power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 2EDF7275K | Gate Driver ICs BSC160N15NS5 | N-Channel Power MOSFET TDA21462 | Integrated Smart Power Stages BSC146N10LS5 | N-Channel Power MOSFET IQE006NE2LM5CG | N-Channel Power MOSFET BSC040N10NS5 | N-Channel Power MOSFET 1EDB8275F | Gate Driver ICs IRS20752L | Gate Driver ICs IRS21271S | Gate Driver ICs XDPP1100-Q040 | Digital Power Controllers IPN95R3K7P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPB072N15N3 G | N-Channel Power MOSFET 1EDN7511B | Gate Driver ICs 1 2 3 4 5

OptiMOS™ power MOSFETs in SuperSO8 package

Infineon's OptiMOS™ MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance.

Low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.


Key features

  • Lowest RDS(on) enables highest power density and efficiency
  • Higher operating temperature rating to 175°C for increased reliability
  • Low RthJC for excellent thermal behavior
  • Lower reverse recovery charge (Qrr)

Key benefits

  • Lower full load temperature
  • Less paralleling
  • Reduced overshoot
  • Increased system power density
  • Smaller size
  • System cost reduction
  • Engineering costs and effort reduction

Target applications

  • Server
  • Telecom
  • Power tools
  • Low voltage drives
  • Class D audio applications

Applications

  • 48 V power distribution
  • DIN rail power supplies
  • General purpose motor drive - variating frequency and voltage
  • Solutions for inductive wireless charging above 50 W
  • Telecommunication infrastructure

Designers who used this product also designed with


  • BSC040N10NS5 |
    N-Channel Power MOSFET
  • 1EDB8275F |
    Gate Driver ICs
  • IRS20752L |
    Gate Driver ICs
  • IRS21271S |
    Gate Driver ICs
  • XDPP1100-Q040 |
    Digital Power Controllers
  • IPN95R3K7P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPB072N15N3 G |
    N-Channel Power MOSFET
  • 1EDN7511B |
    Gate Driver ICs
  • IPL60R285P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC098N10NS5 |
    N-Channel Power MOSFET
  • 2EDS8165H |
    Gate Driver ICs
  • IPDD60R050G7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSC430N25NSFD |
    N-Channel Power MOSFET
  • BSC012N06NS |
    N-Channel Power MOSFET
  • IPT60R022S7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • 2EDF7275K |
    Gate Driver ICs
  • BSC160N15NS5 |
    N-Channel Power MOSFET
  • TDA21462 |
    Integrated Smart Power Stages
  • BSC146N10LS5 |
    N-Channel Power MOSFET
  • IQE006NE2LM5CG |
    N-Channel Power MOSFET
  • BSC040N10NS5 |
    N-Channel Power MOSFET
  • 1EDB8275F |
    Gate Driver ICs
  • IRS20752L |
    Gate Driver ICs
  • IRS21271S |
    Gate Driver ICs
  • XDPP1100-Q040 |
    Digital Power Controllers
  • IPN95R3K7P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPB072N15N3 G |
    N-Channel Power MOSFET
  • 1EDN7511B |
    Gate Driver ICs

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number BSC074N15NS5
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0074 ohms
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