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Infineon Technologies AG N-Channel Power MOSFET BSC060N10NS3-G

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N-Channel Power MOSFET - BSC060N10NS3-G - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSC060N10NS3-G
N-Channel Power MOSFET BSC060N10NS3-G
Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on) and FOM (figure of merit). Summary of Features Excellent switching performance World’s lowest RDS(on) Very low Qg and Qgd Excellent gate charge x RDS(on) product (FOM) RoHS compliant-halogen free MSL1 rated 2 Benefits Environmentally friendly Increased efficiency Highest power density Less paralleling required Smallest board-space consumption Easy-to-design products Potential Applications Synchronous rectification for AC-DC SMPS Motor control for 48 V–80 V systems (i.e. domestic vehicles, power-tools, trucks) Isolated DC-DC converters (telecom and datacom systems Or-ing switches and circuit breakers in 48 V systems Class D audio amplifiers Uninterruptable power supplies (UPS) Applications Consumer electronics Electric pumps & fans (12 V) LED lighting system designs Telecommunication infrastructure Wireless Communication Designers who used this product also designed with IRS10752L | Gate Driver ICs IRS4427S | Gate Driver ICs 1EDB8275F | Gate Driver ICs 1EDI60N12AF | Gate Driver ICs BSC047N08NS3 G | N-Channel Power MOSFET BSC028N06NS | N-Channel Power MOSFET IPB039N10N3 G | N-Channel Power MOSFET BSC190N15NS3 G | N-Channel Power MOSFET BSS138N | Small signal/small power MOSFET BSC093N15NS5 | N-Channel Power MOSFET IRF7416PBF-1 | P-Channel Power MOSFET TDA21462 | Integrated Smart Power Stages BSC109N10NS3 G | N-Channel Power MOSFET BSC030N04NS G | N-Channel Power MOSFET IRFB3307Z | N-Channel Power MOSFET 1ED44173N01B | Gate Driver ICs 1EDN7512B | Gate Driver ICs 2EDL8033G4B | Gate Driver ICs 6ED2742S01Q | Gate Driver ICs IRS10752L | Gate Driver ICs IRS4427S | Gate Driver ICs 1EDB8275F | Gate Driver ICs 1EDI60N12AF | Gate Driver ICs BSC047N08NS3 G | N-Channel Power MOSFET BSC028N06NS | N-Channel Power MOSFET IPB039N10N3 G | N-Channel Power MOSFET BSC190N15NS3 G | N-Channel Power MOSFET 1 2 3 4 5

Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on) and FOM (figure of merit).


Summary of Features

  • Excellent switching performance
  • World’s lowest RDS(on)
  • Very low Qg and Qgd
  • Excellent gate charge x RDS(on) product (FOM)
  • RoHS compliant-halogen free
  • MSL1 rated 2

Benefits

  • Environmentally friendly
  • Increased efficiency
  • Highest power density
  • Less paralleling required
  • Smallest board-space consumption
  • Easy-to-design products

Potential Applications

  • Synchronous rectification for AC-DC SMPS
  • Motor control for 48 V–80 V systems (i.e. domestic vehicles, power-tools, trucks)
  • Isolated DC-DC converters (telecom and datacom systems
  • Or-ing switches and circuit breakers in 48 V systems
  • Class D audio amplifiers
  • Uninterruptable power supplies (UPS)

Applications

  • Consumer electronics
  • Electric pumps & fans (12 V)
  • LED lighting system designs
  • Telecommunication infrastructure
  • Wireless Communication

Designers who used this product also designed with


  • IRS10752L |
    Gate Driver ICs
  • IRS4427S |
    Gate Driver ICs
  • 1EDB8275F |
    Gate Driver ICs
  • 1EDI60N12AF |
    Gate Driver ICs
  • BSC047N08NS3 G |
    N-Channel Power MOSFET
  • BSC028N06NS |
    N-Channel Power MOSFET
  • IPB039N10N3 G |
    N-Channel Power MOSFET
  • BSC190N15NS3 G |
    N-Channel Power MOSFET
  • BSS138N |
    Small signal/small power MOSFET
  • BSC093N15NS5 |
    N-Channel Power MOSFET
  • IRF7416PBF-1 |
    P-Channel Power MOSFET
  • TDA21462 |
    Integrated Smart Power Stages
  • BSC109N10NS3 G |
    N-Channel Power MOSFET
  • BSC030N04NS G |
    N-Channel Power MOSFET
  • IRFB3307Z |
    N-Channel Power MOSFET
  • 1ED44173N01B |
    Gate Driver ICs
  • 1EDN7512B |
    Gate Driver ICs
  • 2EDL8033G4B |
    Gate Driver ICs
  • 6ED2742S01Q |
    Gate Driver ICs
  • IRS10752L |
    Gate Driver ICs
  • IRS4427S |
    Gate Driver ICs
  • 1EDB8275F |
    Gate Driver ICs
  • 1EDI60N12AF |
    Gate Driver ICs
  • BSC047N08NS3 G |
    N-Channel Power MOSFET
  • BSC028N06NS |
    N-Channel Power MOSFET
  • IPB039N10N3 G |
    N-Channel Power MOSFET
  • BSC190N15NS3 G |
    N-Channel Power MOSFET

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number BSC060N10NS3-G
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0060 ohms
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