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Infineon Technologies AG N-Channel Power MOSFET BSC050NE2LS

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Product
Description
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N-Channel Power MOSFET - BSC050NE2LS - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSC050NE2LS
N-Channel Power MOSFET BSC050NE2LS
With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. Available in halfbridge configuration (power stage 5x6). Benefits Save overall system costs by reducing the number of phases in multiphase converters Reduce power losses and increase efficiency for all load conditions Save space with smallest packages like CanPAK™, S3O8 or system in package solution Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in Potential Applications Onboard charger Mainboard Notebook DC-DC VRD/VRM LED Motor control Designers who used this product also designed with IRF4905S | P-Channel Power MOSFET IRF7103 | N-Channel Power MOSFET IRF9530N | P-Channel Power MOSFET IRLR2905Z | N-Channel Power MOSFET SN7002N | Small Signal/Small Power MOSFET BSC16DN25NS3 G | N-Channel Power MOSFET BGA616 | Multi-purpose LNAs BSS169 | N-Channel Depletion Mode MOSFET BSC320N20NS3 G | N-Channel Power MOSFET BSS316N | Small Signal/Small Power MOSFET IRFB4410Z | N-Channel Power MOSFET IRF3205S | N-Channel Power MOSFET IRF4905S | P-Channel Power MOSFET IRF7103 | N-Channel Power MOSFET IRF9530N | P-Channel Power MOSFET IRLR2905Z | N-Channel Power MOSFET SN7002N | Small Signal/Small Power MOSFET BSC16DN25NS3 G | N-Channel Power MOSFET BGA616 | Multi-purpose LNAs BSS169 | N-Channel Depletion Mode MOSFET 1 2 3

With the OptiMOS™ 25V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. Available in halfbridge configuration (power stage 5x6).


Benefits

  • Save overall system costs by reducing the number of phases in multiphase converters
  • Reduce power losses and increase efficiency for all load conditions
  • Save space with smallest packages like CanPAK™, S3O8 or system in package solution
  • Minimize EMI in the system making external snubber networks obsolete and the products easy to design-in

Potential Applications

  • Onboard charger
  • Mainboard
  • Notebook
  • DC-DC
  • VRD/VRM
  • LED
  • Motor control

Designers who used this product also designed with


  • IRF4905S |
    P-Channel Power MOSFET
  • IRF7103 |
    N-Channel Power MOSFET
  • IRF9530N |
    P-Channel Power MOSFET
  • IRLR2905Z |
    N-Channel Power MOSFET
  • SN7002N |
    Small Signal/Small Power MOSFET
  • BSC16DN25NS3 G |
    N-Channel Power MOSFET
  • BGA616 |
    Multi-purpose LNAs
  • BSS169 |
    N-Channel Depletion Mode MOSFET
  • BSC320N20NS3 G |
    N-Channel Power MOSFET
  • BSS316N |
    Small Signal/Small Power MOSFET
  • IRFB4410Z |
    N-Channel Power MOSFET
  • IRF3205S |
    N-Channel Power MOSFET
  • IRF4905S |
    P-Channel Power MOSFET
  • IRF7103 |
    N-Channel Power MOSFET
  • IRF9530N |
    P-Channel Power MOSFET
  • IRLR2905Z |
    N-Channel Power MOSFET
  • SN7002N |
    Small Signal/Small Power MOSFET
  • BSC16DN25NS3 G |
    N-Channel Power MOSFET
  • BGA616 |
    Multi-purpose LNAs
  • BSS169 |
    N-Channel Depletion Mode MOSFET

1
2
3

Supplier's Site Datasheet
 - 8275340 - RS Components, Ltd.
Corby, Northants, United Kingdom
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. N-channel - Enhancement mode. Automotive AEC Q101 qualified. MSL1 up to 260°C peak reflow. 175°C operating temperature. Green package (lead free). Ultra low Rds(on) Channel Type = N Maximum Continuous Drain Current = 58 A Maximum Drain Source Voltage = 25 V Maximum Drain Source Resistance = 7.1 mOhms Maximum Gate Threshold Voltage = 2V Minimum Gate Threshold Voltage = 1.2V Maximum Gate Source Voltage = -20 V, +20 V Package Type = TDSON Mounting Type = Surface Mount Transistor Configuration = Single

OptiMOSâ„¢ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode. Automotive AEC Q101 qualified. MSL1 up to 260°C peak reflow. 175°C operating temperature. Green package (lead free). Ultra low Rds(on)
Channel Type = N
Maximum Continuous Drain Current = 58 A
Maximum Drain Source Voltage = 25 V
Maximum Drain Source Resistance = 7.1 mOhms
Maximum Gate Threshold Voltage = 2V
Minimum Gate Threshold Voltage = 1.2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = TDSON
Mounting Type = Surface Mount
Transistor Configuration = Single

Supplier's Site
 - 8275340P - RS Components, Ltd.
Corby, Northants, United Kingdom
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. N-channel - Enhancement mode. Automotive AEC Q101 qualified. MSL1 up to 260°C peak reflow. 175°C operating temperature. Green package (lead free). Ultra low Rds(on) Channel Type = N Maximum Continuous Drain Current = 58 A Maximum Drain Source Voltage = 25 V Maximum Drain Source Resistance = 7.1 mOhms Maximum Gate Threshold Voltage = 2V Minimum Gate Threshold Voltage = 1.2V Maximum Gate Source Voltage = -20 V, +20 V Package Type = TDSON Mounting Type = Surface Mount Transistor Configuration = Single Delivery on production packaging - Reel. This product is non-returnable.

OptiMOSâ„¢ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode. Automotive AEC Q101 qualified. MSL1 up to 260°C peak reflow. 175°C operating temperature. Green package (lead free). Ultra low Rds(on)
Channel Type = N
Maximum Continuous Drain Current = 58 A
Maximum Drain Source Voltage = 25 V
Maximum Drain Source Resistance = 7.1 mOhms
Maximum Gate Threshold Voltage = 2V
Minimum Gate Threshold Voltage = 1.2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = TDSON
Mounting Type = Surface Mount
Transistor Configuration = Single
Delivery on production packaging - Reel. This product is non-returnable.

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 25V 58A TDSON-8 OptiMOS

MOSFET N-Ch 25V 58A TDSON-8 OptiMOS

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC050NE2LS - 005109-BSC050NE2LS - Win Source Electronics
Yishun, Singapore
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC050NE2LS
005109-BSC050NE2LS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC050NE2LS 005109-BSC050NE2LS
Manufacturer: Infineon Technologies Win Source Part Number: 005109-BSC050NE2LS Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Family Name: BSC050NE2LS Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TDSON-8 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 25V Continuous Drain Current at 25°C: 39A (Ta), 58A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 10.4nC @ 10V Max Input Capacitance: 760pF @ 12V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 mOhm @ 30A, 10V Alternative Parts (Cross-Reference): MCP87050T-U/MF; RJK0210DPA-00-J5A; CSD58887Q3; Introduction Date: February 24, 2010 ECCN: EAR99 Country of Origin: China, Malaysia Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 005109-BSC050NE2LS
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Family Name: BSC050NE2LS
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 25V
Continuous Drain Current at 25°C: 39A (Ta), 58A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 10.4nC @ 10V
Max Input Capacitance: 760pF @ 12V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5 mOhm @ 30A, 10V
Alternative Parts (Cross-Reference): MCP87050T-U/MF; RJK0210DPA-00-J5A; CSD58887Q3;
Introduction Date: February 24, 2010
ECCN: EAR99
Country of Origin: China, Malaysia
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient

Supplier's Site Datasheet
Futian, Shenzhen, China
Triode/MOS Tube/Transistor >> MOSFETs
BSC050NE2LS
Triode/MOS Tube/Transistor >> MOSFETs BSC050NE2LS
25V 58A 28W 5mΩ@10V,30A 2V@250uA N Channel TDSON-8-EP(5x6) MOSFETs ROHS

25V 58A 28W 5mΩ@10V,30A 2V@250uA N Channel TDSON-8-EP(5x6) MOSFETs ROHS

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG RS Components, Ltd. VAST STOCK CO., LIMITED Win Source Electronics LCSC Electronics Technology (HK) Limited
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSC050NE2LS 8275340 BSC050NE2LS 005109-BSC050NE2LS BSC050NE2LS
Product Name N-Channel Power MOSFET MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC050NE2LS Triode/MOS Tube/Transistor >> MOSFETs
Polarity N-Channel; N N-Channel N-Channel; N-Channel N-Channel
Transistor Technology / Material Si/SiC
rDS(on) 0.0050 ohms 0.0071 ohms 0.0050 ohms
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type PG-TDSON-8 TDSON SOT3; PG-TDSON-8
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