- Trained on our vast library of engineering resources.

Infineon Technologies AG N-Channel Power MOSFET BSC040N10NS5SC

Description
OptiMOS™ 5 100 V power MOSFETs in SuperSO8 DSC package with dual-side cooling for enhanced thermal performance OptiMOS™ 5 100 V power MOSFETs in SuperSO8 DSC (dual-side cooling) package offer all thermal management benefits of dual-side cooling solutions with industry-standard footprint. SuperSO8 DSC allows excellent thermal performance with two paths for heat dissipation (bottom through PCB + top through exposed clip and heatsink). About 30% of the heat generated on the MOSFET die is transferred through the top and less heat is transferred to the PCB. Thus, either the PCB runs cooler at the same power dissipation for improved reliability, or more power can be handled by the MOSFET for higher power density. Summary of Features High performance silicon technology Low top-side RthJC (0.72 K/W) Package rated to TJmax=175ºC Industry-standard footprint, compatible with SuperSO8 and PQFN 5x6 products Benefits Lower conduction losses and switching losses for higher system efficiency Improved heat dissipation for high power density and improved reliability Superior power handling capability and ruggedness for longer lifetime Drop-in replacement for SuperSO8 and PQFN 5x6 easy to design-in, no PCB layout change Potential Applications Power and gardening tools Service robots and automated guided vehicles (AGVs) Telecom power supplies Server power supplies Applications 48 V power distribution DIN rail power supplies Secondary Power Distribution Centers Telecommunication infrastructure Trusted semiconductor solutions for light electric vehicles (LEV) Designers who used this product also designed with BSZ075N08NS5 | N-Channel Power MOSFET BSC110N15NS5 | N-Channel Power MOSFET BSS138W | Small Signal/Small Power MOSFET BSC093N15NS5 | N-Channel Power MOSFET 1ED44173N01B | Gate Driver ICs 1EDB8275F | Gate Driver ICs 1EDI60N12AF | Gate Driver ICs 1EDN7512B | Gate Driver ICs 2EDL8033G4B | Gate Driver ICs 6ED2742S01Q | Gate Driver ICs IRS10752L | Gate Driver ICs IRS21271S | Gate Driver ICs IRS4427S | Gate Driver ICs BSZ900N15NS3 G | N-Channel Power MOSFET BSZ900N20NS3 G | N-Channel Power MOSFET BSC066N06NS | N-Channel Power MOSFET BSC320N20NS3 G | N-Channel Power MOSFET BSD235N | Small signal/small power MOSFET BSZ075N08NS5 | N-Channel Power MOSFET BSC110N15NS5 | N-Channel Power MOSFET BSS138W | Small Signal/Small Power MOSFET BSC093N15NS5 | N-Channel Power MOSFET 1ED44173N01B | Gate Driver ICs 1EDB8275F | Gate Driver ICs 1EDI60N12AF | Gate Driver ICs 1EDN7512B | Gate Driver ICs 1 2 3 4 5
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - BSC040N10NS5SC - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSC040N10NS5SC
N-Channel Power MOSFET BSC040N10NS5SC
OptiMOS™ 5 100 V power MOSFETs in SuperSO8 DSC package with dual-side cooling for enhanced thermal performance OptiMOS™ 5 100 V power MOSFETs in SuperSO8 DSC (dual-side cooling) package offer all thermal management benefits of dual-side cooling solutions with industry-standard footprint. SuperSO8 DSC allows excellent thermal performance with two paths for heat dissipation (bottom through PCB + top through exposed clip and heatsink). About 30% of the heat generated on the MOSFET die is transferred through the top and less heat is transferred to the PCB. Thus, either the PCB runs cooler at the same power dissipation for improved reliability, or more power can be handled by the MOSFET for higher power density. Summary of Features High performance silicon technology Low top-side RthJC (0.72 K/W) Package rated to TJmax=175ºC Industry-standard footprint, compatible with SuperSO8 and PQFN 5x6 products Benefits Lower conduction losses and switching losses for higher system efficiency Improved heat dissipation for high power density and improved reliability Superior power handling capability and ruggedness for longer lifetime Drop-in replacement for SuperSO8 and PQFN 5x6 easy to design-in, no PCB layout change Potential Applications Power and gardening tools Service robots and automated guided vehicles (AGVs) Telecom power supplies Server power supplies Applications 48 V power distribution DIN rail power supplies Secondary Power Distribution Centers Telecommunication infrastructure Trusted semiconductor solutions for light electric vehicles (LEV) Designers who used this product also designed with BSZ075N08NS5 | N-Channel Power MOSFET BSC110N15NS5 | N-Channel Power MOSFET BSS138W | Small Signal/Small Power MOSFET BSC093N15NS5 | N-Channel Power MOSFET 1ED44173N01B | Gate Driver ICs 1EDB8275F | Gate Driver ICs 1EDI60N12AF | Gate Driver ICs 1EDN7512B | Gate Driver ICs 2EDL8033G4B | Gate Driver ICs 6ED2742S01Q | Gate Driver ICs IRS10752L | Gate Driver ICs IRS21271S | Gate Driver ICs IRS4427S | Gate Driver ICs BSZ900N15NS3 G | N-Channel Power MOSFET BSZ900N20NS3 G | N-Channel Power MOSFET BSC066N06NS | N-Channel Power MOSFET BSC320N20NS3 G | N-Channel Power MOSFET BSD235N | Small signal/small power MOSFET BSZ075N08NS5 | N-Channel Power MOSFET BSC110N15NS5 | N-Channel Power MOSFET BSS138W | Small Signal/Small Power MOSFET BSC093N15NS5 | N-Channel Power MOSFET 1ED44173N01B | Gate Driver ICs 1EDB8275F | Gate Driver ICs 1EDI60N12AF | Gate Driver ICs 1EDN7512B | Gate Driver ICs 1 2 3 4 5

OptiMOS™ 5 100 V power MOSFETs in SuperSO8 DSC package with dual-side cooling for enhanced thermal performance

OptiMOS™ 5 100 V power MOSFETs in SuperSO8 DSC (dual-side cooling) package offer all thermal management benefits of dual-side cooling solutions with industry-standard footprint.

SuperSO8 DSC allows excellent thermal performance with two paths for heat dissipation (bottom through PCB + top through exposed clip and heatsink).

About 30% of the heat generated on the MOSFET die is transferred through the top and less heat is transferred to the PCB. Thus,

  • either the PCB runs cooler at the same power dissipation for improved reliability,
  • or more power can be handled by the MOSFET for higher power density.

Summary of Features

  • High performance silicon technology
  • Low top-side RthJC (0.72 K/W)
  • Package rated to TJmax=175ºC
  • Industry-standard footprint, compatible with SuperSO8 and PQFN 5x6 products

Benefits

  • Lower conduction losses and switching losses for higher system efficiency
  • Improved heat dissipation for high power density and improved reliability
  • Superior power handling capability and ruggedness for longer lifetime
  • Drop-in replacement for SuperSO8 and PQFN 5x6 easy to design-in, no PCB layout change

Potential Applications

  • Power and gardening tools
  • Service robots and automated guided vehicles (AGVs)
  • Telecom power supplies
  • Server power supplies

Applications

  • 48 V power distribution
  • DIN rail power supplies
  • Secondary Power Distribution Centers
  • Telecommunication infrastructure
  • Trusted semiconductor solutions for light electric vehicles (LEV)

Designers who used this product also designed with


  • BSZ075N08NS5 |
    N-Channel Power MOSFET
  • BSC110N15NS5 |
    N-Channel Power MOSFET
  • BSS138W |
    Small Signal/Small Power MOSFET
  • BSC093N15NS5 |
    N-Channel Power MOSFET
  • 1ED44173N01B |
    Gate Driver ICs
  • 1EDB8275F |
    Gate Driver ICs
  • 1EDI60N12AF |
    Gate Driver ICs
  • 1EDN7512B |
    Gate Driver ICs
  • 2EDL8033G4B |
    Gate Driver ICs
  • 6ED2742S01Q |
    Gate Driver ICs
  • IRS10752L |
    Gate Driver ICs
  • IRS21271S |
    Gate Driver ICs
  • IRS4427S |
    Gate Driver ICs
  • BSZ900N15NS3 G |
    N-Channel Power MOSFET
  • BSZ900N20NS3 G |
    N-Channel Power MOSFET
  • BSC066N06NS |
    N-Channel Power MOSFET
  • BSC320N20NS3 G |
    N-Channel Power MOSFET
  • BSD235N |
    Small signal/small power MOSFET
  • BSZ075N08NS5 |
    N-Channel Power MOSFET
  • BSC110N15NS5 |
    N-Channel Power MOSFET
  • BSS138W |
    Small Signal/Small Power MOSFET
  • BSC093N15NS5 |
    N-Channel Power MOSFET
  • 1ED44173N01B |
    Gate Driver ICs
  • 1EDB8275F |
    Gate Driver ICs
  • 1EDI60N12AF |
    Gate Driver ICs
  • 1EDN7512B |
    Gate Driver ICs

1
2
3
4
5

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number BSC040N10NS5SC
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0040 ohms
Unlock Full Specs
to access all available technical data

Similar Products

Automotive MOSFET - AUIRF2804S - Infineon Technologies AG
Infineon Technologies AG
Specs
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
VGS(off) 20 volts
View Details
7 suppliers
Power - MOSFET (Si/SiC) - Silicon Carbide CoolSiC™ MOSFET - Silicon Carbide MOSFET Discretes - AIMDQ75R027M1H - AIMDQ75R027M1H - Infineon Technologies AG
Specs
Polarity N-Channel; N
Transistor Technology / Material Silicon carbide
TJ -55 to 175 C (-67 to 347 F)
View Details
N-Channel Power MOSFET - BSC027N10NS5 - Infineon Technologies AG
Specs
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0027 ohms
View Details