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Infineon Technologies AG N-Channel Power MOSFET BSC039N06NS

Description
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. Summary of Features Optimized for synchronous rectification 40% lower R DS(on) than alternative devices 40% improvement of FOM over similar devices RoHS compliant - halogen free MSL1 rated Benefits Highest system efficiency Less paralleling required Increased power density System cost reduction Very low voltage overshoot Potential Applications Synchronous rectification Solar micro inverter Isolated DC-DC converters Motor control for 12-48V systems Or-ing switches Applications 48V 12V DC-DC converter Automotive telematics control unit (TCU) Automotive USB charging head unit Domestic robots Telecommunication infrastructure Designers who used this product also designed with 2ED2110S06M | Gate Driver ICs 2EDN7534B | Gate Driver ICs IRS21271S | Gate Driver ICs IRS2005S | Gate Driver ICs 2EDF7275K | Gate Driver ICs BSC028N06NS | N-Channel Power MOSFET IPB072N15N3 G | N-Channel Power MOSFET XDPP1100-Q024 | Digital Power Controllers TDA21462 | Integrated Smart Power Stages BSC093N15NS5 | N-Channel Power MOSFET DPS310 | Pressure sensors for IoT 2EDL05N06PF | Gate Driver ICs 6ED2742S01Q | Gate Driver ICs IRS10752L | Gate Driver ICs IRS4427S | Gate Driver ICs 1ED44173N01B | Gate Driver ICs 1EDI60N12AF | Gate Driver ICs 1EDN7550B | Gate Driver ICs 2ED2110S06M | Gate Driver ICs 2EDN7534B | Gate Driver ICs IRS21271S | Gate Driver ICs IRS2005S | Gate Driver ICs 2EDF7275K | Gate Driver ICs BSC028N06NS | N-Channel Power MOSFET IPB072N15N3 G | N-Channel Power MOSFET XDPP1100-Q024 | Digital Power Controllers 1 2 3 4 5
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - BSC039N06NS - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSC039N06NS
N-Channel Power MOSFET BSC039N06NS
OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter. Summary of Features Optimized for synchronous rectification 40% lower R DS(on) than alternative devices 40% improvement of FOM over similar devices RoHS compliant - halogen free MSL1 rated Benefits Highest system efficiency Less paralleling required Increased power density System cost reduction Very low voltage overshoot Potential Applications Synchronous rectification Solar micro inverter Isolated DC-DC converters Motor control for 12-48V systems Or-ing switches Applications 48V 12V DC-DC converter Automotive telematics control unit (TCU) Automotive USB charging head unit Domestic robots Telecommunication infrastructure Designers who used this product also designed with 2ED2110S06M | Gate Driver ICs 2EDN7534B | Gate Driver ICs IRS21271S | Gate Driver ICs IRS2005S | Gate Driver ICs 2EDF7275K | Gate Driver ICs BSC028N06NS | N-Channel Power MOSFET IPB072N15N3 G | N-Channel Power MOSFET XDPP1100-Q024 | Digital Power Controllers TDA21462 | Integrated Smart Power Stages BSC093N15NS5 | N-Channel Power MOSFET DPS310 | Pressure sensors for IoT 2EDL05N06PF | Gate Driver ICs 6ED2742S01Q | Gate Driver ICs IRS10752L | Gate Driver ICs IRS4427S | Gate Driver ICs 1ED44173N01B | Gate Driver ICs 1EDI60N12AF | Gate Driver ICs 1EDN7550B | Gate Driver ICs 2ED2110S06M | Gate Driver ICs 2EDN7534B | Gate Driver ICs IRS21271S | Gate Driver ICs IRS2005S | Gate Driver ICs 2EDF7275K | Gate Driver ICs BSC028N06NS | N-Channel Power MOSFET IPB072N15N3 G | N-Channel Power MOSFET XDPP1100-Q024 | Digital Power Controllers 1 2 3 4 5

OptiMOS™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro inverter and fast switching DC-DC converter.


Summary of Features

  • Optimized for synchronous rectification
  • 40% lower R DS(on) than alternative devices
  • 40% improvement of FOM over similar devices
  • RoHS compliant - halogen free
  • MSL1 rated

Benefits

  • Highest system efficiency
  • Less paralleling required
  • Increased power density
  • System cost reduction
  • Very low voltage overshoot

Potential Applications

  • Synchronous rectification
  • Solar micro inverter
  • Isolated DC-DC converters
  • Motor control for 12-48V systems
  • Or-ing switches

Applications

  • 48V 12V DC-DC converter
  • Automotive telematics control unit (TCU)
  • Automotive USB charging head unit
  • Domestic robots
  • Telecommunication infrastructure

Designers who used this product also designed with


  • 2ED2110S06M |
    Gate Driver ICs
  • 2EDN7534B |
    Gate Driver ICs
  • IRS21271S |
    Gate Driver ICs
  • IRS2005S |
    Gate Driver ICs
  • 2EDF7275K |
    Gate Driver ICs
  • BSC028N06NS |
    N-Channel Power MOSFET
  • IPB072N15N3 G |
    N-Channel Power MOSFET
  • XDPP1100-Q024 |
    Digital Power Controllers
  • TDA21462 |
    Integrated Smart Power Stages
  • BSC093N15NS5 |
    N-Channel Power MOSFET
  • DPS310 |
    Pressure sensors for IoT
  • 2EDL05N06PF |
    Gate Driver ICs
  • 6ED2742S01Q |
    Gate Driver ICs
  • IRS10752L |
    Gate Driver ICs
  • IRS4427S |
    Gate Driver ICs
  • 1ED44173N01B |
    Gate Driver ICs
  • 1EDI60N12AF |
    Gate Driver ICs
  • 1EDN7550B |
    Gate Driver ICs
  • 2ED2110S06M |
    Gate Driver ICs
  • 2EDN7534B |
    Gate Driver ICs
  • IRS21271S |
    Gate Driver ICs
  • IRS2005S |
    Gate Driver ICs
  • 2EDF7275K |
    Gate Driver ICs
  • BSC028N06NS |
    N-Channel Power MOSFET
  • IPB072N15N3 G |
    N-Channel Power MOSFET
  • XDPP1100-Q024 |
    Digital Power Controllers

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Supplier's Site Datasheet
 - 9064292 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFET N-Channel 60V 100A OptiMOS TDSON8 - Discrete Semiconductors - MOSFET Transistors

MOSFET N-Channel 60V 100A OptiMOS TDSON8 - Discrete Semiconductors - MOSFET Transistors

Supplier's Site
 - 9064292P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFET N-Channel 60V 100A OptiMOS TDSON8 - Discrete Semiconductors - MOSFET Transistors Delivery on production packaging - Reel. This product is non-returnable.

MOSFET N-Channel 60V 100A OptiMOS TDSON8 - Discrete Semiconductors - MOSFET Transistors
Delivery on production packaging - Reel. This product is non-returnable.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC039N06NS - 1154676-BSC039N06NS - Win Source Electronics
Yishun, Singapore
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC039N06NS
1154676-BSC039N06NS
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC039N06NS 1154676-BSC039N06NS
Manufacturer: Infineon Technologies Win Source Part Number: 1154676-BSC039N06NS Manufacturer Homepage: www.infineon.com Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 1154676-BSC039N06NS
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Sufficient

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 60V 100A TDSON-8

MOSFET N-Ch 60V 100A TDSON-8

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG RS Components, Ltd. Win Source Electronics VAST STOCK CO., LIMITED
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number BSC039N06NS 9064292 1154676-BSC039N06NS BSC039N06NS
Product Name N-Channel Power MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC039N06NS MOSFET
Polarity N-Channel; N N-Channel
Transistor Technology / Material Si/SiC
rDS(on) 0.0039 ohms 0.0059 ohms
TJ -55 to 150 C (-67 to 302 F)
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