- Trained on our vast library of engineering resources.

Infineon Technologies AG N-Channel Power MOSFET BSC027N10NS5

Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
N-Channel Power MOSFET - BSC027N10NS5 - Infineon Technologies AG
Neubiberg, Germany
N-Channel Power MOSFET
BSC027N10NS5
N-Channel Power MOSFET BSC027N10NS5
OptiMOS™ power MOSFETs in SuperSO8 package Infineon's OptiMOS™ MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance. Low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort. Applications 48 V power distribution DIN rail power supplies Microinverter solutions Multicopters and drones Trusted semiconductor solutions for light electric vehicles (LEV) Key features Lowest RDS(on) enables highest power density and efficiency Higher operating temperature rating to 175°C for increased reliability Low RthJC for excellent thermal behavior Lower reverse recovery charge (Qrr) Key benefits Lower full load temperature Less paralleling Reduced overshoot Increased system power density Smaller size System cost reduction Engineering costs and effort reduction Target applications Server Telecom Power tools Low voltage drives Class D audio applications Designers who used this product also designed with 2EDL8033G4B | Gate Driver ICs 6ED2742S01Q | Gate Driver ICs IRS10752L | Gate Driver ICs IRS21271S | Gate Driver ICs BSC093N15NS5 | N-Channel Power MOSFET BSC220N20NSFD | N-Channel Power MOSFET BSC026N08NS5 | N-Channel Power MOSFET BSZ900N20NS3 G | N-Channel Power MOSFET BSC012N06NS | N-Channel Power MOSFET 2EDN7524G | Gate Driver ICs IQE006NE2LM5CG | N-Channel Power MOSFET BSZ068N06NS | N-Channel Power MOSFET ICE2QR2280G-1 | Quasi Resonant CoolSET™ BSC035N10NS5 | N-Channel Power MOSFET BSZ22DN20NS3 G | N-Channel Power MOSFET IPZ60R017C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1EDN8550B | Gate Driver ICs 1EDN7512B | Gate Driver ICs 2EDL8033G4B | Gate Driver ICs 6ED2742S01Q | Gate Driver ICs IRS10752L | Gate Driver ICs IRS21271S | Gate Driver ICs BSC093N15NS5 | N-Channel Power MOSFET BSC220N20NSFD | N-Channel Power MOSFET BSC026N08NS5 | N-Channel Power MOSFET BSZ900N20NS3 G | N-Channel Power MOSFET 1 2 3 4 5

OptiMOS™ power MOSFETs in SuperSO8 package

Infineon's OptiMOS™ MOSFETs in SuperSO8 package extend OptiMOS™ 3 and 5 product portfolio and enable higher power density in addition to improved robustness, responding to the need for lower system cost and increased performance.

Low reverse recovery charge (Qrr) improves the system reliability by providing a significant reduction of voltage overshoot, which minimizes the need for snubber circuits, resulting in less engineering cost and effort.


Applications

  • 48 V power distribution
  • DIN rail power supplies
  • Microinverter solutions
  • Multicopters and drones
  • Trusted semiconductor solutions for light electric vehicles (LEV)

Key features

  • Lowest RDS(on) enables highest power density and efficiency
  • Higher operating temperature rating to 175°C for increased reliability
  • Low RthJC for excellent thermal behavior
  • Lower reverse recovery charge (Qrr)

Key benefits

  • Lower full load temperature
  • Less paralleling
  • Reduced overshoot
  • Increased system power density
  • Smaller size
  • System cost reduction
  • Engineering costs and effort reduction

Target applications

  • Server
  • Telecom
  • Power tools
  • Low voltage drives
  • Class D audio applications

Designers who used this product also designed with


  • 2EDL8033G4B |
    Gate Driver ICs
  • 6ED2742S01Q |
    Gate Driver ICs
  • IRS10752L |
    Gate Driver ICs
  • IRS21271S |
    Gate Driver ICs
  • BSC093N15NS5 |
    N-Channel Power MOSFET
  • BSC220N20NSFD |
    N-Channel Power MOSFET
  • BSC026N08NS5 |
    N-Channel Power MOSFET
  • BSZ900N20NS3 G |
    N-Channel Power MOSFET
  • BSC012N06NS |
    N-Channel Power MOSFET
  • 2EDN7524G |
    Gate Driver ICs
  • IQE006NE2LM5CG |
    N-Channel Power MOSFET
  • BSZ068N06NS |
    N-Channel Power MOSFET
  • ICE2QR2280G-1 |
    Quasi Resonant CoolSET™
  • BSC035N10NS5 |
    N-Channel Power MOSFET
  • BSZ22DN20NS3 G |
    N-Channel Power MOSFET
  • IPZ60R017C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • 1EDN8550B |
    Gate Driver ICs
  • 1EDN7512B |
    Gate Driver ICs
  • 2EDL8033G4B |
    Gate Driver ICs
  • 6ED2742S01Q |
    Gate Driver ICs
  • IRS10752L |
    Gate Driver ICs
  • IRS21271S |
    Gate Driver ICs
  • BSC093N15NS5 |
    N-Channel Power MOSFET
  • BSC220N20NSFD |
    N-Channel Power MOSFET
  • BSC026N08NS5 |
    N-Channel Power MOSFET
  • BSZ900N20NS3 G |
    N-Channel Power MOSFET

1
2
3
4
5

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number BSC027N10NS5
Product Name N-Channel Power MOSFET
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0027 ohms
Unlock Full Specs
to access all available technical data

Similar Products

N-Channel Power MOSFET - BSC014N04LSI - Infineon Technologies AG
Specs
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0014 ohms
View Details
3 suppliers
N-Channel Power MOSFET - BSC012N06NS - Infineon Technologies AG
Specs
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0012 ohms
View Details
Dual MOSFET - BSL308C - Infineon Technologies AG
Infineon Technologies AG
Specs
Polarity N+P
Transistor Technology / Material Si/SiC
MOSFET Operating Mode Enhancement
View Details
N-Channel Power MOSFET - BSC010N04LSI - Infineon Technologies AG
Specs
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0010 ohms
View Details
3 suppliers