Infineon Technologies AG Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC016N06NSSC BSC016N06NSSC

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Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC016N06NSSC - BSC016N06NSSC - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC016N06NSSC
BSC016N06NSSC
Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC016N06NSSC BSC016N06NSSC
OptiMOS™ 5 60 V power MOSFETs in SuperSO8 DSC package with dual-side cooling for enhanced thermal performance OptiMOS™ 5 60 V power MOSFETs in SuperSO8 DSC (dual-side cooling) package offer all thermal management benefits of dual-side cooling solutions with industry-standard footprint. SuperSO8 DSC allows excellent thermal performance with two paths for heat dissipation (bottom through PCB + top through exposed clip and heatsink). About 30% of the heat generated on the MOSFET die is transferred through the top and less heat is transferred to the PCB. Thus, either the PCB runs cooler at the same power dissipation for improved reliability, or more power can be handled by the MOSFET for higher power density. Summary of Features High performance silicon technology Low top-side RthJC (0.72 K/W) Package rated to TJmax=175ºC Industry-standard footprint, compatible with SuperSO8 and PQFN 5x6 products Benefits Lower conduction losses and switching losses for higher system efficiency Improved heat dissipation for high power density and improved reliability Superior power handling capability and ruggedness for longer lifetime Drop-in replacement for SuperSO8 and PQFN 5x6 easy to design-in, no PCB layout change Potential Applications Power and gardening tools Service robots and automated guided vehicles (AGVs) Telecom power supplies Server power supplies

OptiMOS™ 5 60 V power MOSFETs in SuperSO8 DSC package with dual-side cooling for enhanced thermal performance

OptiMOS™ 5 60 V power MOSFETs in SuperSO8 DSC (dual-side cooling) package offer all thermal management benefits of dual-side cooling solutions with industry-standard footprint.

SuperSO8 DSC allows excellent thermal performance with two paths for heat dissipation (bottom through PCB + top through exposed clip and heatsink).

About 30% of the heat generated on the MOSFET die is transferred through the top and less heat is transferred to the PCB. Thus,

  • either the PCB runs cooler at the same power dissipation for improved reliability,
  • or more power can be handled by the MOSFET for higher power density.

Summary of Features

  • High performance silicon technology
  • Low top-side RthJC (0.72 K/W)
  • Package rated to TJmax=175ºC
  • Industry-standard footprint, compatible with SuperSO8 and PQFN 5x6 products

Benefits

  • Lower conduction losses and switching losses for higher system efficiency
  • Improved heat dissipation for high power density and improved reliability
  • Superior power handling capability and ruggedness for longer lifetime
  • Drop-in replacement for SuperSO8 and PQFN 5x6 easy to design-in, no PCB layout change

Potential Applications

  • Power and gardening tools
  • Service robots and automated guided vehicles (AGVs)
  • Telecom power supplies
  • Server power supplies
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Technical Specifications

  Infineon Technologies AG
Product Category Power MOSFET
Product Number BSC016N06NSSC
Product Name Power - MOSFET (Si/SiC) - N-Channel Power MOSFET - BSC016N06NSSC
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
rDS(on) 0.0016 ohms
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