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Infineon Technologies AG MOSFET BSC016N03LSGATMA1

Description
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3
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MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3

MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3

Supplier's Site Datasheet
Single FETs, MOSFETs - BSC016N03LSGATMA1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSC016N03LSGATMA1DKR-ND
Single FETs, MOSFETs BSC016N03LSGATMA1DKR-ND
N-Channel 30V 32A (Ta), 100A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount PG-TDSON-8-1

N-Channel 30V 32A (Ta), 100A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount PG-TDSON-8-1

Supplier's Site Datasheet
Single FETs, MOSFETs - BSC016N03LSGATMA1CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSC016N03LSGATMA1CT-ND
Single FETs, MOSFETs BSC016N03LSGATMA1CT-ND
N-Channel 30V 32A (Ta), 100A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount PG-TDSON-8-1

N-Channel 30V 32A (Ta), 100A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount PG-TDSON-8-1

Supplier's Site Datasheet
Single FETs, MOSFETs - BSC016N03LSGATMA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
BSC016N03LSGATMA1TR-ND
Single FETs, MOSFETs BSC016N03LSGATMA1TR-ND
N-Channel 30V 32A (Ta), 100A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount PG-TDSON-8-1

N-Channel 30V 32A (Ta), 100A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount PG-TDSON-8-1

Supplier's Site Datasheet
 - BSC016N03LSGATMA1 - Rochester Electronics
Newburyport, MA, United States
BSC016N03 - 12V-300V N-Channel Power MOSFET

BSC016N03 - 12V-300V N-Channel Power MOSFET

Supplier's Site Datasheet
Discrete Semiconductor - BSC016N03LSGATMA1 - LIXINC Electronics Co., Limited
Hong Kong, China
Discrete Semiconductor
BSC016N03LSGATMA1
Discrete Semiconductor BSC016N03LSGATMA1
MOSFET N-CH 30V 32A/100A TDSON

MOSFET N-CH 30V 32A/100A TDSON

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC016N03LSGATMA1 - 105003-BSC016N03LSGATMA1 - Win Source Electronics
Yishun, Singapore
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC016N03LSGATMA1
105003-BSC016N03LSGATMA1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC016N03LSGATMA1 105003-BSC016N03LSGATMA1
Manufacturer: Infineon Technologies Win Source Part Number: 105003-BSC016N03LSGA TMA1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.5W (Ta), 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TDSON-8 Dimension: 8-PowerTDFN Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 32A (Ta), 100A (Tc) Gate-Source Threshold Voltage: 2.2V @ 250μA Max Gate Charge: 131nC @ 10V Max Input Capacitance: 10000pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.6 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 55 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 105003-BSC016N03LSGATMA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TDSON-8
Dimension: 8-PowerTDFN
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 32A (Ta), 100A (Tc)
Gate-Source Threshold Voltage: 2.2V @ 250μA
Max Gate Charge: 131nC @ 10V
Max Input Capacitance: 10000pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.6 mOhm @ 30A, 10V
Popularity: Medium
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - BSC016N03LSGATMA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
BSC016N03LSGATMA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs BSC016N03LSGATMA1
MOSFET N-CH 30V 32A/100A TDSON

MOSFET N-CH 30V 32A/100A TDSON

Supplier's Site

Technical Specifications

  VAST STOCK CO., LIMITED DigiKey Rochester Electronics LIXINC Electronics Co., Limited Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Power MOSFET RF MOSFET Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number BSC016N03LSGATMA1 BSC016N03LSGATMA1DKR-ND BSC016N03LSGATMA1 BSC016N03LSGATMA1 105003-BSC016N03LSGATMA1 BSC016N03LSGATMA1
Product Name MOSFET Single FETs, MOSFETs Discrete Semiconductor TRANSISTORS - Transistors - FETs, MOSFETs - RF - BSC016N03LSGATMA1 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel
Package Type 8-PowerTDFN PG-TDSON-8 SOT3; PG-TDSON-8 8-PowerTDFN
Packing Method Tape Reel; Tape & Reel Tape Reel; Tape & Reel (TR)Cut Tape (CT)Digi-Reel庐 Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
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