The BGSA11GN10 is a Dual Single Pole Single Throw (SPST) RF antenna tuning switch optimized for low RON enabling applications up to 6.0 GHz. This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. Unlike GaAs technology, the 0.1 dB compression point exceeds the switch maximum input power level, resulting in linear performance at all signal levels and external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. Due to its very high RF voltage ruggedness it is suited for switching any reactive devices such as inductors and capacitors in RF matching circuits without significant losses in quality factors.
Summary of Features
High-linearity Dual SPST for antenna tuning switching applications
Ultra-Low RON of 0.79 Ω in ON state for each SPST, 0.38 Ω using both SPST in parallel
Ultra-Low COFF of 250 fF in OFF state
High max RF voltage OFF state handling: 36 V peak (72 Vp-p)
Low harmonic generation
No power supply blocking required
Supply voltage: 1.65 to 3.6 V
Control voltage: 1.35 to 3.3 V (control high)
Suitable for EDGE / C2K / LTE / WCDMA Applications
0.1 to 6.0 GHz coverage
Small form factor 1.1 mm x 1.5 mm
400 µm pad pitch
RoHS and WEEE compliant package
Potential Applications
High-linearity Dual SPST for antenna tuning switching applications
Applications
Convenient, smart, and secure wearables supporting your health and well-being.
The BGSA11GN10 is a Dual Single Pole Single Throw (SPST) RF antenna tuning switch optimized for low RON enabling applications up to 6.0 GHz. This single supply chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control input signal. Unlike GaAs technology, the 0.1 dB compression point exceeds the switch maximum input power level, resulting in linear performance at all signal levels and external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. Due to its very high RF voltage ruggedness it is suited for switching any reactive devices such as inductors and capacitors in RF matching circuits without significant losses in quality factors.
Summary of Features
- High-linearity Dual SPST for antenna tuning switching applications
- Ultra-Low RON of 0.79 Ω in ON state for each SPST, 0.38 Ω using both SPST in parallel
- Ultra-Low COFF of 250 fF in OFF state
- High max RF voltage OFF state handling: 36 V peak (72 Vp-p)
- Low harmonic generation
- No power supply blocking required
- Supply voltage: 1.65 to 3.6 V
- Control voltage: 1.35 to 3.3 V (control high)
- Suitable for EDGE / C2K / LTE / WCDMA Applications
- 0.1 to 6.0 GHz coverage
- Small form factor 1.1 mm x 1.5 mm
- 400 µm pad pitch
- RoHS and WEEE compliant package
Potential Applications
High-linearity Dual SPST for antenna tuning switching applications
Applications
- Convenient, smart, and secure wearables supporting your health and well-being.
